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TP65H050WS
+StücklisteGANFET N-CH 650V 34A TO247-3
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HerstellerTransphorm
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Herstellerteil #TP65H050WS
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Spezifikationen
| Attribut | Wert |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
| Power Dissipation (Max) | 119W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Base Product Number | TP65H050 |
Übersicht
Description
The TP65H050WS is a high-performance power MOSFET designed for applications requiring efficient power management. It features a maximum continuous drain current of 65A and a maximum voltage rating of 50V, making it suitable for various power conversion and switching applications. This device is optimized for low RDS(on), providing minimal conduction losses, which enhances overall efficiency in systems such as DC-DC converters, motor drivers, and power supplies.
The TP65H050WS is housed in a robust TO-220 package, ensuring effective thermal dissipation, which is critical for maintaining performance under high load conditions. Its fast switching capabilities also contribute to reduced switching losses, thereby improving overall system efficiency.
The MOSFET's gate threshold voltage is designed to be compatible with standard drive voltages, simplifying integration into existing circuits. Overall, the TP65H050WS offers a reliable solution for engineers seeking to optimize power management in various electronic applications.
The TP65H050WS is housed in a robust TO-220 package, ensuring effective thermal dissipation, which is critical for maintaining performance under high load conditions. Its fast switching capabilities also contribute to reduced switching losses, thereby improving overall system efficiency.
The MOSFET's gate threshold voltage is designed to be compatible with standard drive voltages, simplifying integration into existing circuits. Overall, the TP65H050WS offers a reliable solution for engineers seeking to optimize power management in various electronic applications.
Equivalent
The TP65H050WS is a 650V N-channel MOSFET. Equivalent products include the STP65H050WS, IRF840, and FQD65N650. Always consult datasheets for specific parameters like Rds(on), Vgs, and package compatibility to ensure proper replacement in your application.
Features
The TP65H050WS is a high-performance n-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of up to 65V.
2. Current Rating: Capable of handling continuous drain currents up to 50A, making it suitable for high-power applications.
3. Low R_DS(on): Offers low on-resistance (R_DS(on)) values, enhancing efficiency and reducing thermal dissipation during operation.
4. Fast Switching Speed: Designed for high-speed switching, which is ideal for applications in power supplies and converters.
5. Thermal Performance: Features a robust thermal design, allowing for effective heat dissipation.
6. Package Type: Typically available in TO-220 or DPAK packages, facilitating easy integration into various circuit designs.
7. Reliable Performance: Engineered for high reliability and longevity in demanding environments.
These features make the TP65H050WS a versatile choice for engineers in designing efficient power electronic systems.
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of up to 65V.
2. Current Rating: Capable of handling continuous drain currents up to 50A, making it suitable for high-power applications.
3. Low R_DS(on): Offers low on-resistance (R_DS(on)) values, enhancing efficiency and reducing thermal dissipation during operation.
4. Fast Switching Speed: Designed for high-speed switching, which is ideal for applications in power supplies and converters.
5. Thermal Performance: Features a robust thermal design, allowing for effective heat dissipation.
6. Package Type: Typically available in TO-220 or DPAK packages, facilitating easy integration into various circuit designs.
7. Reliable Performance: Engineered for high reliability and longevity in demanding environments.
These features make the TP65H050WS a versatile choice for engineers in designing efficient power electronic systems.
Pinout
The TP65H050WS is a 650V, 50A N-channel MOSFET designed for high-efficiency power applications. It is housed in a TO-247 package, which typically has three pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's switching function. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin connects to the load. It is where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin serves as the reference point for the gate voltage and allows current to flow into the MOSFET from the source.
The TP65H050WS is ideal for applications such as power supplies, motor drives, and energy conversion systems due to its low on-resistance and fast switching capabilities.
1. Gate (G): This pin controls the MOSFET's switching function. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin connects to the load. It is where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin serves as the reference point for the gate voltage and allows current to flow into the MOSFET from the source.
The TP65H050WS is ideal for applications such as power supplies, motor drives, and energy conversion systems due to its low on-resistance and fast switching capabilities.
Manufacturer
The TP65H050WS is manufactured by TOSHIBA, a multinational conglomerate based in Japan. TOSHIBA is known for its diverse range of products and services, including electronics, semiconductors, and storage solutions. The company has a strong presence in various industries, such as information technology, consumer electronics, and infrastructure systems. Founded in 1939, TOSHIBA has a long history of innovation and is recognized for its contributions to the development of advanced technology and electronics. The TP65H050WS specifically is a power MOSFET, indicating TOSHIBA's involvement in the semiconductor market, where they design and produce components used in various electronic applications.
Application
The TP65H050WS is a high-performance N-channel MOSFET designed for various applications, including:
1. Power Management: Used in DC-DC converters and power supplies for efficient voltage regulation.
2. Motor Control: Employed in brushless DC motors and servo drives for precise control.
3. Switching Applications: Ideal for high-speed switching in load drivers and relay replacements.
4. Telecommunications: Utilized in RF amplifiers and signal processing circuits.
5. Consumer Electronics: Found in battery management systems and portable devices for power efficiency.
Overall, its low on-resistance and high-speed capabilities make it suitable for demanding electronic applications.
1. Power Management: Used in DC-DC converters and power supplies for efficient voltage regulation.
2. Motor Control: Employed in brushless DC motors and servo drives for precise control.
3. Switching Applications: Ideal for high-speed switching in load drivers and relay replacements.
4. Telecommunications: Utilized in RF amplifiers and signal processing circuits.
5. Consumer Electronics: Found in battery management systems and portable devices for power efficiency.
Overall, its low on-resistance and high-speed capabilities make it suitable for demanding electronic applications.
Package
The TP65H050WS is packaged in a TO-247 format, which is a metal package designed for high-power applications. This package type offers excellent thermal performance and robustness, suitable for use in power electronics.
