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TPC8207(TE12L,Q)
+StücklisteMOSFET 2N-CH 20V 6A 8-SOP
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HerstellerToshiba Halbleiter und Speicher
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Herstellerteil #TPC8207(TE12L,Q)
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Datenblatt TPC8207(TE12L,Q) DataSheet
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Paket SOIC-8
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Auf Lager4405
365 Tage Qualitätsgarantie
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Spezifikationen
| Attribut | Wert |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 6A |
| Rds On(Max) @ Id Vgs | 20mOhm @ 4.8A, 4V |
| Vgs(th)(Max) @ Id | 1.2V @ 200µA |
| Gate Charge(Qg)(Max) @ Vgs | 22nC @ 5V |
| Input Capacitance(Ciss)(Max) @ Vds | 2010pF @ 10V |
| Power - Max | 450mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
