TPH3205WSB

Abbildungen dienen nur als Referenz

TPH3205WSB

+Stückliste

GANFET N-CH 650V 36A TO247-3

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier Transphorm
Package / Case Tube
Part Status Obsolete
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain(Id) @ 25°C 36A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 60mOhm @ 22A, 8V
Vgs(th)(Max) @ Id 2.6V @ 700µA
Gate Charge(Qg)(Max) @ Vgs 42 nC @ 8 V
Vgs(Max) ±18V
Input Capacitance(Ciss)(Max) @ Vds 2200 pF @ 400 V
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3

Produkte, die mit TPH3205WSB zusammenhängen