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TRS8E65C,S1Q
+StücklisteDIODE SCHOTTKY 650V 8A TO220-2L
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HerstellerToshiba Halbleiter und Speicher
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Herstellerteil #TRS8E65C,S1Q
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Paket TO-220-2
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Auf Lager4695
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Tube |
| Part Status | Obsolete |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified(Io) | 8A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 90 µA @ 650 V |
| Capacitance @ Vr F | 44pF @ 650V, 1MHz |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-2L |
