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IC GATE DRVR LOW-SIDE 8HVSSOP
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HerstellerTexas Instruments
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Herstellerteil #UCC27332QDGNRQ1
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Datenblatt UCC27332QDGNRQ1 DataSheet
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Spezifikationen
| Attribut | Wert |
| Part Status | Active |
| Driven Configuration | Low-Side |
| Channel Type | Single |
| Number of Drivers | 1 |
| Gate Type | MOSFET (N-Channel) |
| Voltage - Supply | 4.5V ~ 18V |
| Logic Voltage - VIL, VIH | 1.5V, 1.6V |
| Current - Peak Output (Source, Sink) | 9A, 9A |
| Input Type | Non-Inverting |
| Rise / Fall Time (Typ) | 16ns, 11ns |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Supplier Device Package | 8-HVSSOP |
| Base Product Number | UCC27332 |
| Grade | Automotive |
| Qualification | AEC-Q100 |
Übersicht
Description
This driver incorporates advanced features like a built-in dead-time control, which helps prevent shoot-through in half-bridge configurations. Its thermal shutdown and under-voltage lockout features enhance reliability and protection in various operating conditions. The UCC27332QDGNRQ1 is available in a compact DGN package, making it suitable for space-constrained designs. Overall, this device is ideal for automotive and industrial applications requiring robust performance and efficiency in driving power MOSFETs.
Equivalent
Features
1. High Drive Current: Capable of delivering peak output currents up to 6A, enabling fast switching and reduced switching losses.
2. Wide Supply Voltage Range: Operates from a supply voltage of 4.5V to 15V, accommodating various applications.
3. Fast Switching Speeds: Low propagation delays and rise/fall times for efficient operation in high-frequency applications.
4. Bootstrap Capability: Supports high-side and low-side configurations, facilitating high-voltage applications.
5. Integrated Under-Voltage Lockout (UVLO): Provides protection against low supply voltages to ensure reliable operation.
6. Thermal Protection: Designed to handle high temperatures, improving reliability in demanding environments.
7. Isolation: Features separate input and output grounds for enhanced noise immunity.
8. Compact Package: Available in a 16-pin HTQFP package, enabling efficient PCB layout.
This makes the UCC27332QDGNRQ1 suitable for applications in power conversion, motor drives, and more.
Pinout
1. VIN: Supply voltage input.
2. GND: Ground reference.
3. HIN: High-side input signal for driving the high-side MOSFET.
4. LIN: Low-side input signal for driving the low-side MOSFET.
5. HO: High-side output to the gate of the high-side MOSFET.
6. LO: Low-side output to the gate of the low-side MOSFET.
7. VOUT: Output voltage for the gate driver.
8. COM: Common connection for the output stage.
The UCC27332QDGNRQ1 is designed for driving MOSFETs in high-frequency applications with fast rise and fall times, high current drive capability, and low propagation delay.
Manufacturer
The UCC27332QDGNRQ1 is a high-speed gate driver designed for driving high-power MOSFETs and IGBTs, making it valuable in applications such as power supply circuits, motor drives, and renewable energy systems. Texas Instruments focuses on providing high-performance solutions for engineers and designers, and the UCC27332QDGNRQ1 reflects their commitment to quality and reliability in the semiconductor industry.