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UCC27710DR
+StücklisteIC GATE DRVR HALF-BRIDGE 8SOIC
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HerstellerTexas Instruments
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Herstellerteil #UCC27710DR
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Paket SOIC-8
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Auf Lager1882
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Driven Configuration | Half-Bridge |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel, P-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V |
| Logic Voltage - VILVIH | 1.5V, 1.6V |
| Current - Peak Output(Source Sink) | 500mA, 1A |
| High Side Voltage - Max(Bootstrap) | 600 V |
| Rise / Fall Time(Typ) | 40ns, 20ns |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
Key features include its ability to provide a strong drive current with 4 A source and 4 A sink capability, ensuring rapid switching of power devices. It also offers protection features like under-voltage lockout (UVLO) for both high-side and low-side channels, ensuring safe operation under unstable voltage conditions. With a maximum switching frequency of up to 500 kHz, it supports high-speed applications effectively.
The UCC27710DR is packaged in an 8-pin SOIC (Small Outline Integrated Circuit) for compact and efficient PCB design. Its robust design and protection features make it a reliable choice for enhancing the performance and efficiency of modern power electronics systems.
Equivalent
Features
1. Wide Supply Voltage Range: It operates from 10 V to 20 V, making it versatile for various applications.
2. High Output Current Capability: The driver can source and sink current up to 4 A, providing robust control for power devices.
3. Fast Propagation Delays: It offers optimized switching performance with typical propagation delays of 125 ns.
4. Split Outputs: Separate outputs for sourcing and sinking currents improve control and reduce switching losses.
5. UVLO Protection: Under-voltage lockout protection ensures reliable operation by preventing low-voltage anomalies.
6. Bootstrap Diode: An integrated bootstrap diode simplifies the design and reduces external component count.
7. Negative Voltage Handling: The device is capable of handling a high-side negative voltage rating of up to -8 V.
8. Thermal Shutdown: Built-in thermal protection enhances reliability and safety during operation.
9. Compact Package: Available in an 8-pin SOIC package, it is suitable for space-constrained designs.
These features make the UCC27710DR ideal for industrial motor drives, solar inverters, and other power conversion applications.
Pinout
1. NC (No Connect): No internal connection.
2. IN (Input): The input signal for controlling the high-side and low-side outputs.
3. VDD (Supply Voltage): Powers the IC.
4. COM (Common Ground): Ground reference for the IC.
5. LO (Low-Side Output): Drives the gate of the low-side MOSFET.
6. HS (High-Side Source): Connects to the source of the high-side MOSFET and the bootstrap capacitor.
7. HO (High-Side Output): Drives the gate of the high-side MOSFET.
8. HB (High-Side Bias Voltage): Connects to the bootstrap capacitor to supply the high-side driver.
This arrangement enables the UCC27710DR to effectively drive power MOSFETs or IGBTs in half-bridge or full-bridge configurations, making it suitable for applications such as motor drives, power supplies, and inverter circuits.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Utilized in power management systems for converting power efficiently.
2. Motor Drives: Supports precise control and high efficiency in variable speed motor drives.
3. Uninterruptible Power Supplies (UPS): Provides reliable power switching capabilities.
4. Solar Inverters: Enhances efficiency and performance in photovoltaic systems.
5. Industrial Power Converters: Suitable for various industrial applications requiring robust power conversion.
These applications benefit from the device's fast switching, high efficiency, and ability to drive both high-side and low-side transistors.