UCC5390ECQDWVQ1

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UCC5390ECQDWVQ1

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DGTL ISO 5KV 1CH GATE DVR 8SOIC

  • HerstellerTexas Instruments

  • Herstellerteil #UCC5390ECQDWVQ1

  • Auf Lager24705

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Spezifikationen

Attribut Wert
Part Status Obsolete
Base Product Number UCC5390
Technology Capacitive Coupling
Number of Channels 1
Voltage - Isolation 5000Vrms
Common Mode Transient Immunity (Min) 120kV/µs
Propagation Delay tp LH / tp HL (Max) 60ns, 60ns
Pulse Width Distortion (Max) 20ns
Rise / Fall Time (Typ) 10ns, 10ns
Current - Output High, Low 17A, 17A
Current - Peak Output 10A
Voltage - Output Supply 13.2V ~ 33V
Grade Automotive
Qualification AEC-Q100
Operating Temperature -40°C ~ 150°C
Mounting Type Surface Mount
Package / Case 8-SOIC (0.295", 7.50mm Width)
Supplier Device Package 8-SOIC
Approval Agency CQC, UL, VDE
Packaging Tube

Übersicht

Description

UCC5390ECQDWVQ1 is a TI bootstrapped high-side/low-side gate driver for driving N-channel MOSFETs in half-bridge configurations. It provides separate HO (high-side) and LO (low-side) outputs, a logic input, an enable pin, and protection features. The high-side is bootstrap-powered (VB–VS capacitor) while VCC powers the logic and the low-side driver. Protections typically include undervoltage lockout and shoot-through prevention, with fault/enable signaling. It suits switch-mode power supplies, DC-DC converters, motor drives, and other bridge-topology applications. The ECQDWVQ1 suffix indicates a RoHS-compliant packaging variant (an 8-pin package). For exact electrical specs (supply ranges, drive strength, timing, UVLO thresholds), consult the TI datasheet.

Features

Here are the key features of TI UCC5390ECQDWVQ1 (concise):
- Dual, bootstrapped high-side/low-side MOSFET gate driver for N-channel MOSFETs
- Independent channel outputs with fast drive and matched timing
- Bootstrap supply for high-side drive (floating supply)
- Enable input and fault/status reporting options
- Shoot-through prevention with programmable or inherent dead-time
- Undervoltage lockout (UVLO) on both channels
- Protection features: overcurrent/short-circuit protection and thermal protection
- Automotive-grade (AEC-Q100 qualified) with wide operating temperature
- Suitable for DC–DC converters, motor drives, and secondary-side gate-drive applications
- 24-pin DWVQ/QFN-style package (compact footprint)
Note: For exact electrical specs (voltage ranges, drive strength, dead-time options, and pinout), please consult the TI datasheet.

Pinout

Pin count: 8 pins (8-pin package).
Function: Dual-channel MOSFET gate driver (half-bridge) that provides HO (high-side) and LO (low-side) outputs to drive a pair of N-channel MOSFETs. Uses a bootstrap supply for the high-side drive and includes typical protections (e.g., undervoltage lockout).

Manufacturer

- Manufacturer: Texas Instruments Incorporated (TI)
- What kind of company: An American multinational semiconductor company that designs and manufactures analog and embedded processing ICs and other integrated circuits for diverse markets (consumer, automotive, industrial, computing).

Application

UCC5390ECQDWVQ1 is a high‑speed MOSFET gate driver. Typical applications:
- Synchronous buck/boost and other switching regulators (non‑isolated/ isolated topologies)
- Off‑line power supplies (flyback, forward converters)
- Automotive power electronics (DC‑DC converters, battery management front‑ends)
- Motor drives (BLDC/stepper motor front-ends)
- Any circuit needing high‑side/low‑side gate drive with protection features (UVLO, shoot‑through prevention)

Package

The UCC5390ECQDWVQ1 is supplied in an automotive-grade QFN (VQFN) package; the "Q1" suffix denotes AEC‑Q100 (automotive) qualification.

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