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UF3C065080B7S
+StücklisteSICFET N-CH 650V 27A D2PAK-7
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HerstellerVereinigtSiC
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Herstellerteil #UF3C065080B7S
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Spezifikationen
| Attribut | Wert |
| Supplier | UnitedSiC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Cascode SiCJFET) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 27A (Tc) |
| Rds On(Max) @ Id Vgs | 105mOhm @ 20A, 12V |
| Vgs(th)(Max) @ Id | 6V @ 10mA |
| Gate Charge(Qg)(Max) @ Vgs | 23 nC @ 12 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 760 pF @ 100 V |
| Power Dissipation (Max) | 136.4W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7 |
