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UMW FDN335N
+StücklisteSOT-23 MOSFETS ROHS
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HerstellerUTD Halbleiter
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Herstellerteil #UMW FDN335N
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Datenblatt UMW FDN335N DataSheet
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Spezifikationen
| Attribut | Wert |
| Supplier | UTD Semiconductor |
| Package | Tape & Reel (TR) |
| Series | UMW |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 1.7A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 70mOhm @ 1.7A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 3.5 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 310 pF @ 10 V |
| PowerDissipation(Max) | 1W (Ta) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23 |
