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UMW FDN335N
+StücklisteSOT-23 MOSFETS ROHS
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HerstellerUTD Halbleiter
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Herstellerteil #UMW FDN335N
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Datenblatt UMW FDN335N DataSheet
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Spezifikationen
| Attribut | Wert |
| Supplier | UTD Semiconductor |
| Package / Case | Tape & Reel (TR) |
| Series | UMW |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 1.7A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 70mOhm @ 1.7A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 3.5 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 310 pF @ 10 V |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23 |