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VP0109N3-G
+StücklisteMOSFET P-CH 90V 250MA TO92-3
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HerstellerMikrochip-Technologie
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Herstellerteil #VP0109N3-G
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Spezifikationen
| Attribut | Wert |
| Supplier | Microchip Technology |
| Package | Bag |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 90 V |
| Current-ContinuousDrain(Id)@25°C | 250mA (Tj) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V, 10V |
| RdsOn(Max)@IdVgs | 8Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 3.5V @ 1mA |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 60 pF @ 25 V |
| PowerDissipation(Max) | 1W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-92-3 |