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VP2110K1-G
+StücklisteMOSFET P-CH 100V 120MA TO236AB
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HerstellerMikrochip-Technologie
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Herstellerteil #VP2110K1-G
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Spezifikationen
| Attribut | Wert |
| Supplier | Microchip Technology |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 120mA (Tj) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V |
| Rds On(Max) @ Id Vgs | 12Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 3.5V @ 1mA |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 60 pF @ 25 V |
| Power Dissipation (Max) | 360mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB (SOT23) |
