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VRF2933
+StücklisteMOSFET RF PWR N-CH 50V 300W M177
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HerstellerMikrochip-Technologie
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Herstellerteil #VRF2933
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Paket M177
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Auf Lager6562
365 Tage Qualitätsgarantie
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Spezifikationen
| Attribut | Wert |
| Package / Case | Bulk |
| Part Status | Active |
| Transistor Type | N-Channel |
| Frequency | 150MHz |
| Gain | 25dB |
| Voltage - Test | 50 V |
| Current Rating (Amps) | 2mA |
| Current - Test | 250 mA |
| Power - Output | 300W |
| Voltage - Rated | 170 V |
Übersicht
Description
- High Efficiency: Low energy consumption with industry-leading COP (Coefficient of Performance).
- Flexible Zoning: Supports multiple indoor units with independent control for customized comfort.
- Quiet Operation: Low noise levels for indoor and outdoor units.
- Smart Connectivity: Compatible with building automation systems for remote monitoring and control.
- Reliability: Robust design with built-in fault detection and diagnostics.
Ideal for medium to large spaces, VRF2933 balances performance, sustainability, and user convenience.
Equivalent
- BLF6G20LS-250 (NXP)
- MRF6VP2600H (NXP)
- PTVA127002EV1R0 (Wolfspeed)
- CGH40010F (Wolfspeed)
These are LDMOS/GaN RF power transistors with similar frequency and power characteristics, suitable for applications like base stations and RF amplifiers. Always verify datasheet specs for exact compatibility.
Features
- High Efficiency: Inverter-driven compressors and advanced controls optimize energy use.
- Capacity Range: Wide modulation (29.3 kW cooling, 33.5 kW heating) for diverse spaces.
- Quiet Operation: Low noise levels (~45 dB) for indoor/outdoor units.
- Flexible Installation: Supports long piping (up to 1,000m) and height differences (50m).
- Smart Controls: Compatible with centralized management systems (e.g., MELCloud).
- Reliability: Robust design for stable performance in extreme temps (-15°C to 46°C).
- Eco-Friendly: R410A refrigerant and reduced energy consumption.
Ideal for commercial/residential applications requiring precise climate control.
Pinout
Pin Functions:
1. Gate 1 (G1): Input for the first MOSFET.
2. Drain 1 (D1): Drain connection for the first MOSFET.
3. Source 1 (S1): Source connection for the first MOSFET.
4. Source 2 (S2): Source connection for the second MOSFET.
5. Drain 2 (D2): Drain connection for the second MOSFET.
6. Gate 2 (G2): Input for the second MOSFET.
7. NC (No Connection): Unused pin.
8. NC (No Connection): Unused pin.
Key Features:
- High-speed switching for RF applications.
- Low on-resistance (RDS(on)).
- Suitable for push-pull amplifiers and other RF circuits.