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W29N01HVBINA
+StücklisteIC FLASH 1GBIT 63-VFBGA
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HerstellerWinbond Electronics
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Herstellerteil #W29N01HVBINA
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Datenblatt W29N01HVBINA DataSheet
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Auf Lager6775
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Spezifikationen
| Attribut | Wert |
| PartStatus | Active |
| BaseProductNumber | W29N01 |
| DigiKeyProgrammable | Not Verified |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NAND (SLC) |
| MemorySize | 1Gbit |
| MemoryOrganization | 128M x 8 |
| WriteCycleTime-Word,Page | 25ns |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package | 63-VFBGA |
| SupplierDevicePackage | 63-VFBGA (9x11) |
| Packaging | Tray |
| AccessTime | 25 ns |
Übersicht
Description
If "W29N01HVBINA" is associated with a particular brand or technology sector, an effective introduction would involve describing its primary function, key features, and applications. For instance, in the case of a memory chip, relevant details might include storage capacity, data transfer rates, and typical use cases in consumer electronics or computing. To gain a comprehensive understanding, consulting technical datasheets or product manuals associated with the identifier would be beneficial.
Equivalent
1. Micron: MT29F1G08ABADAWP
2. Samsung: K9F1G08U0F
3. Toshiba: TC58NVG0S3HTA00
4. SK Hynix: H27U1G8F2BTR
5. Cypress/Spansion: S34ML01G1
These chips generally offer similar storage capacities and technology, but always confirm compatibility based on specific application requirements.
Features
1. Density and Organization: It has a storage capacity of 1 Gb, organized as 128M x 8 bits.
2. Page and Block Structure: It features a page size of 2048 bytes with 64 spare bytes, and a block size of 64 pages.
3. Interface: It uses a standard NAND interface, supporting Serial Peripheral Interface (SPI) operations for efficient data management.
4. Performance: The device provides fast read performance with a maximum read throughput of up to 30 MB/s.
5. Endurance and Data Retention: Offers high endurance with up to 100,000 program/erase cycles and data retention of up to 10 years, making it suitable for reliable long-term storage.
6. Error Correction: It includes built-in error correction code (ECC) capability to ensure data integrity.
7. Operating Voltage: The chip operates at a voltage range of 2.7V to 3.6V.
8. Applications: It's suitable for a range of applications, including consumer electronics, industrial devices, and embedded systems.
These features make it a versatile choice for various data storage needs.
Pinout
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the memory density and organization of the W29N01HVBINA?
A: It has a 1Gbit density organized as 128M x 8 bits, ideal for high-density NAND Flash applications.
Q: Is this NAND Flash SLC or MLC technology?
A: It uses SLC (Single-Level Cell) technology, offering higher endurance and reliability compared to MLC.
Q: What is the operating voltage range for this component?
A: The supply voltage range is 2.7V to 3.6V, suitable for standard 3.3V systems.
Q: What is the typical access time and page write cycle time?
A: Access time is 25 ns, and the write cycle time per word/page is also 25 ns.
Q: What is the operating temperature range for the W29N01HVBINA?
A: It supports an industrial temperature range of -40°C to 85°C (TA).
Q: What package does this device come in?
A: It is available in a 63-VFBGA package (9x11mm), surface mount, supplied in tray packaging.