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W29N01HVDINA
+StücklisteIC FLASH 1GBIT 48-VFBGA
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HerstellerWinbond Electronics
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Herstellerteil #W29N01HVDINA
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Datenblatt W29N01HVDINA DataSheet
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Auf Lager3641
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Spezifikationen
| Attribut | Wert |
| Part Status | Active |
| Base Product Number | W29N01 |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Write Cycle Time - Word, Page | 25ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-VFBGA |
| Supplier Device Package | 48-VFBGA (8x6.5) |
| Packaging | Tray |
| Access Time | 25 ns |
Übersicht
Description
Because revisions differ, the exact timing, voltage, density, and package are specified in the Winbond W29N01HVDINA datasheet. If you share your application (controller, interface, temperature range), I can tailor a more precise overview.
Equivalent
- Micron MT29F1G08ABAFD
- Samsung K9F1G08U0D
Note: exact cross-reference depends on package (TSOP/FBGA), voltage (3.3V/1.8V), page size, and ECC. For precise substitutes, use a cross-reference tool with these specs.
Features
- Capacity/organization: 1 Mb (128 Kbytes), 128K × 8
- Interface: SPI serial (standard and fast read)
- Voltage: 2.7–3.6 V
- Page size: 256 bytes
- Erase: 4 KB sectors; larger block erases (32 KB/64 KB) on many variants
- Performance: fast read at tens of MHz
- Endurance: typically 1e5–1e6 program/erase cycles
- Power: low-power modes including deep power-down
- Features: status register with protection, write/sector/block protection, basic security features
- Packaging: 8-pin package (SOP/SOIC) with industrial temperature options
Note: exact erase block sizes and speed may vary by revision; consult the datasheet for the precise device variant.
Pinout
Function: W29N01HVDINA is a serial (SPI) NAND flash memory (1 Gbit). Typical pin functions: CS (chip select, active low), CLK (serial clock), DI (data input/SI), DO (data output/SO), WP# (write protect), HOLD# (hold), Vcc (power), GND (ground).
Manufacturer
- What kind of company: A Taiwanese semiconductor company that designs and manufactures memory ICs (NAND/NOR Flash, DRAM) for various markets (consumer, industrial, automotive).
Application
- Consumer electronics: storage in devices like set-top boxes, digital cameras, portable players, USB drives
- Automotive/industrial: firmware storage, data logging, and application data
- General portable/mass-storage roles in devices needing compact NAND flash with reliable non-volatile memory
Package
Frequently Asked Questions
Q: Is this NAND Flash single-level cell (SLC) or multi-level cell (MLC)?
A: It is SLC NAND Flash, offering higher reliability and faster read/write speeds compared to MLC.
Q: What is the storage capacity and organization of the W29N01HVDINA?
A: It provides 1Gbit of memory, organized as 128M x 8 bits, suitable for high-density data storage.
Q: What is the typical read access time for this device?
A: The access time is 25 ns, ensuring fast data retrieval for performance-sensitive applications.
Q: Can this component operate in harsh temperature environments?
A: Yes, its operating temperature ranges from -40°C to 85°C, making it suitable for industrial applications.
Q: What is the recommended voltage supply range for stable operation?
A: The device requires a voltage supply between 2.7V and 3.6V, supporting standard 3.3V systems.
Q: What package type is used for surface mounting?
A: It comes in a 48-VFBGA (8x6.5mm) package, ideal for space-constrained PCB designs.
Q: Is this memory non-volatile and how is data retained?
A: Yes, it is non-volatile FLASH memory, retaining data without power using NAND technology.
Q: What write cycle timings should be considered for page programming?
A: The write cycle time for word/page operation is 25 ns, enabling efficient programming speeds.