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W631GG6NB-09
+StücklisteIC DRAM 1GBIT SSTL 15 96VFBGA
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HerstellerWinbond Electronics
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Herstellerteil #W631GG6NB-09
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Auf Lager4406
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Part Status | Obsolete |
| Base Product Number | W631GG6 |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 1Gbit |
| Memory Organization | 64M x 16 |
| Memory Interface | SSTL_15 |
| Clock Frequency | 1.066 GHz |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-VFBGA |
| Supplier Device Package | 96-VFBGA (7.5x13) |
| Packaging | Tray |
| Access Time | 20 ns |
Übersicht
Description
Pinout
Package
Frequently Asked Questions
Q: What is the memory type and interface of the W631GG6NB-09?
A: It is a volatile DDR3 SDRAM with a 1Gbit capacity and an SSTL_15 memory interface, suitable for high-speed data processing.
Q: What is the maximum clock frequency supported by this component?
A: It supports a clock frequency of 1.066 GHz, enabling fast data transfer rates for DDR3 applications.
Q: What are the voltage supply requirements for this DDR3 chip?
A: It requires a supply voltage range of 1.425V to 1.575V, standard for DDR3 memory modules.
Q: How is the memory organized in the W631GG6NB-09?
A: It is organized as 64M x 16 bits, providing a total of 1Gbit memory with a 16-bit data bus width.
Q: What is the operating temperature range for this device?
A: It operates from 0°C to 95°C (TC), making it suitable for industrial and commercial environments.
Q: Is this part obsolete and available in tray packaging?
A: Yes, the part status is Obsolete, and it comes in tray packaging for surface mount assembly.
Q: What is the access time and write cycle time for this DDR3?
A: Access time is 20 ns, and write cycle time (word, page) is 15 ns, ensuring reliable memory operations.