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WNMD2166-6/TR
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HerstellerWILLSEMI(Will Semicon)
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Herstellerteil #WNMD2166-6/TR
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Datenblatt WNMD2166-6/TR DataSheet
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Auf Lager6710
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Spezifikationen
| Attribut | Wert |
| Manufacturer | WILLSEMI(Will Semicon) |
| Package / Case | SOT-23-6L |
| Operating Temperature | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 4A |
| Drain to Source Voltage (Vdss) | 20V |
| Rds(on) | 0.022Ω@4.5V,4A |
| Gate Threshold Voltage (Vgs(th) @ Id) | 450mV |
| Type | 2 N-Channel |
| Gate Charge(Qg) | [email protected] |
| Input Capacitance(Ciss @ Vds) | 680pF |
| Reverse Transfer Capacitance (Crss @ Vds) | 89pF@10V |
Übersicht
Description
With a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 4.5A, it balances performance and power efficiency. Its low threshold voltage (VGS(th)) ensures compatibility with low-voltage control circuits.
The "TR" suffix indicates tape-and-reel packaging for automated assembly. This MOSFET is ideal for space-constrained designs requiring reliable power handling.
For detailed specifications, refer to the datasheet from the manufacturer.
Equivalent
- MMBT3906: A general-purpose PNP transistor.
- 2N3906: Another PNP transistor with similar specs.
- BC557: Low-power PNP transistor.
- KST3906: SMD equivalent of 2N3906.
Check datasheets for exact compatibility in voltage, current, and package (SOT-23 for WNMD2166-6/TR). For precise alternatives, consult distributors like Digi-Key or Mouser.
Features
- Voltage Rating: 60V (Drain-Source)
- Current Rating: 6A (Continuous Drain Current)
- Low On-Resistance: 50mΩ (max) @ VGS=10V
- Fast Switching: Suitable for high-efficiency applications
- Logic-Level Gate Drive: Compatible with 4.5V drive (VGS(th) ~1-2.5V)
- Power Dissipation: 2W (max)
- Package: SOT-363 (Small Outline Transistor) for space-saving designs
- Applications: Power management, DC-DC converters, load switching
Compact and efficient, it’s ideal for portable and low-voltage systems.
Pinout
Pin Functions:
1. Gate 1 (G1) – Controls the first MOSFET.
2. Source 1 (S1) – Source terminal for the first MOSFET.
3. Drain 1 (D1) – Drain terminal for the first MOSFET.
4. Drain 2 (D2) – Drain terminal for the second MOSFET.
5. Source 2 (S2) – Source terminal for the second MOSFET.
6. Gate 2 (G2) – Controls the second MOSFET.
Key Features:
- Low threshold voltage.
- High-speed switching.
- Compact SOT-363 footprint.