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WNSC10650T6J
+StücklisteSILICON CARBIDE POWER DIODE
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HerstellerWeEn Halbleiter
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Herstellerteil #WNSC10650T6J
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Paket VSFN-4
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Auf Lager6336
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Spezifikationen
| Attribut | Wert |
| Supplier | WeEn Semiconductors |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified(Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
| Capacitance @ Vr F | 328pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (8x8) |
