Abbildungen dienen nur als Referenz
WNSC2D08650TJ
+StücklisteSILICON CARBIDE SCHOTTKY DIODE
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HerstellerWeEn Halbleiter
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Herstellerteil #WNSC2D08650TJ
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Paket 4-VSFN Exposed Pad
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Auf Lager3070
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | WeEn Semiconductors |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DiodeType | Silicon Carbide Schottky |
| Voltage-DCReverse(Vr)(Max) | 650 V |
| Current-AverageRectified(Io) | 8A |
| Voltage-Forward(Vf)(Max)@If | 1.7 V @ 8 A |
| Speed | No Recovery Time > 500mA (Io) |
| ReverseRecoveryTime(trr) | 0 ns |
| Current-ReverseLeakage@Vr | 40 µA @ 650 V |
| Capacitance@VrF | 260pF @ 1V, 1MHz |
| MountingType | Surface Mount |
| Package/Case | 4-VSFN Exposed Pad |
| SupplierDevicePackage | 5-DFN (8x8) |
