XP263N1001TR-G

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XP263N1001TR-G

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MOSFET N-CH 60V 1A SOT23

  • HerstellerTorex Semiconductor Ltd.

  • Herstellerteil #XP263N1001TR-G

  • Auf Lager5758

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Spezifikationen

Attribut Wert
Supplier Torex Semiconductor Ltd
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 1A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 250mOhm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 3.6 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 180 pF @ 20 V
Power Dissipation (Max) 400mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23

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