2N7002L
Onsemi
- Lifecycle
- Active
- Stock
- 2923 Stückzahl
- Package
- SOT-23-3
- Series
- Transistoren von FETs, MOSFETs von Single
Dieser detaillierte Vergleich von 2N7002L und 2N7002,215 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.
Replacement verdict
The 2N7002,215 and 2N7002L are functionally equivalent N-channel enhancement-mode MOSFETs sharing the same 60 V VDS rating, 300 mA continuous drain current, SOT-23 package, and RDS(on) characteristics. Both are suitable for low-side switching, level shifting, and small-signal load control. Designers may treat them as interchangeable in most applications, though gate threshold voltage spread and input capacitance should be validated against the specific drive circuit.
Onsemi
Nexperia USA Inc.
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Use manufacturer datasheets as the final authority.
| Specification | 2N7002L | 2N7002,215 |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 115mA (Ta) | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | 10V |
| Rds On(Max) @ Id Vgs | 7.5Ohm @ 500mA, 10V | 5Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Vgs(Max) | ±20V | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 25 V | 50 pF @ 10 V |
| Power Dissipation (Max) | 200mW (Ta) | 830mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | - | TrenchMOS™ |