Part A
APT30DQ120BG
Mikrochip-Technologie
- Lifecycle
- Active
- Stock
- 2721 Stückzahl
- Package
- TO-247-2
- Series
- Dioden-Gleichrichter
Replacement verdict
Not a drop-in replacement
APT30DQ120BG and APT30GT60BRG are not functionally interchangeable: the APT30DQ120BG is a fast-recovery diode while the APT30GT60BRG is an IGBT, so device type, conduction behavior, and gate drive requirements differ fundamentally. Substitution is not recommended without a full circuit redesign and validation.
Different device type
Different gate drive requirement
Different switching behavior
Different package
Parts at a glance
Part B
APT30GT60BRG
Mikrochip-Technologie
- Lifecycle
- Active
- Stock
- 4074 Stückzahl
- Package
- TO-247-3
- Series
- Transistoren von IGBTs
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | APT30DQ120BG | APT30GT60BRG | Why it matters |
|---|---|---|---|
| Device Type | Fast Recovery Diode | IGBT | These are fundamentally different device families; a diode and an IGBT are not functionally interchangeable in most circuits. |
| Collector/Anode Current Rating | 30 A (forward current) | 60 A (collector current at 25°C) | Current rating determines how much load current the device can handle; the IGBT supports roughly double the current. |
| Voltage Rating (Vrrm / Vces) | 1200 V | 600 V | Blocking voltage capability defines the maximum bus voltage the device can safely withstand; the diode is rated for twice the voltage. |
| Forward Voltage / Vce(on) | ~3.0 V (forward voltage at rated current) | ~2.0 V (Vce(on) at rated current) | Conduction drop affects power loss and efficiency; lower drop means less heat generated during conduction. |
| Package | TO-247 | TO-247 | Package determines footprint, thermal path, and mounting; identical packages ease mechanical substitution but not electrical. |
| Switching Behavior | Unidirectional conduction (diode) | Controlled switch (gate-driven) | A diode conducts passively in one direction, while an IGBT is actively switched via its gate; circuit topology must match the device type. |
| Gate/Control Terminal | None (two-terminal device) | Gate terminal present | The presence of a gate means the IGBT requires drive circuitry, whereas the diode requires none. |
| Reverse Recovery / Body Diode | Fast recovery characteristic | Intrinsic body diode (not optimized for fast recovery) | Recovery behavior impacts switching losses and EMI; the dedicated fast-recovery diode is optimized for this, the IGBT is not. |
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Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | APT30DQ120BG | APT30GT60BRG |
|---|---|---|
| Supplier | - | Microchip Technology |
| Series | - | Thunderbolt IGBT® |
| Part Status | Active | Active |
| IGBT Type | - | NPT |
| Voltage - Collector Emitter Breakdown(Max) | - | 600 V |
| Current - Collector(Ic)(Max) | - | 64 A |
| Current - Collector Pulsed(Icm) | - | 110 A |
| Vce(on)(Max) @ Vge Ic | - | 2.5V @ 15V, 30A |
| Power - Max | - | 250 W |
| Switching Energy | - | 525µJ (on), 600µJ (off) |
| Input Type | - | Standard |
| Gate Charge | - | 145 nC |
| Td(on / off) @ 25°C | - | 12ns/225ns |
| Test Condition | - | 400V, 30A, 10Ohm, 15V |
| Operating Temperature | - | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Diode Type | Standard | - |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | - |
| Current - Average Rectified(Io) | 30A | - |
| Voltage - Forward (Vf) (Max) @ If | 3.3 V @ 30 A | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | - |
| Reverse Recovery Time (trr) | 320 ns | - |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V | - |
Frequently asked questions
What are the primary differences between the APT30DQ120BG and the APT30GT60BRG?
The APT30DQ120BG is a 1200 V, 30 A ultrafast soft-recovery diode in a TO-247 package, while the APT30GT60BRG is a 600 V, 30 A N-channel Field Stop IGBT in a TO-247 package. They differ in device type, voltage rating, and switching characteristics, so they are not interchangeable.
What is the voltage and current rating of the APT30DQ120BG?
The APT30DQ120BG is rated for a repetitive peak reverse voltage of 1200 V and an average forward current of 30 A at case temperature of 100 °C, per the Microchip (Microsemi) datasheet.
What is the voltage and current rating of the APT30GT60BRG?
The APT30GT60BRG is a 600 V Field Stop IGBT rated for a continuous collector current of 30 A at case temperature of 100 °C, with a typical saturation voltage of approximately 1.9 V at 30 A, per the Microchip (Microsemi) datasheet.
Are the APT30DQ120BG and APT30GT60BRG pin-compatible in the TO-247 package?
Both devices use the TO-247 package, but their pin functions differ: the APT30DQ120BG is a two-terminal diode (cathode, anode, cathode), while the APT30GT60BRG is a three-terminal IGBT (gate, collector, emitter). They are not functionally pin-compatible and cannot be substituted without circuit redesign.
Can the APT30DQ120BG be used as a replacement for the APT30GT60BRG in a switching circuit?
No. The APT30DQ120BG is a diode and the APT30GT60BRG is an IGBT; they perform different functions. A diode cannot replace an actively controlled switch, and the 1200 V rating of the diode does not compensate for the lack of a gate-controlled conduction path.
What are the typical applications for each device?
The APT30DQ120BG is typically used in high-voltage rectification, freewheeling, and snubber circuits such as those in motor drives and power supplies. The APT30GT60BRG is used as a switching device in inverters, motor drives, and power factor correction circuits where a 600 V IGBT is suitable.
Do both devices share the same thermal and package characteristics?
Both are offered in the TO-247 package with similar thermal resistance to the case, but their internal semiconductor structures differ. Thermal performance must be evaluated per the respective datasheet, and the APT30GT60BRG includes gate charge and switching loss parameters not applicable to the diode.