BC856B-QVL vs BC856A

Dieser detaillierte Vergleich von BC856B-QVL und BC856A bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

BC856B-QVL

Nexperia USA Inc.

Lifecycle
Active
Stock
7501 Stückzahl
Series
Bipolare Transistoren (BJT-Single Bipolar Transistors)
+Stückliste Anfrage
Part B

BC856A

Diotec Halbleiter

Lifecycle
Active
Stock
2113 Stückzahl
Package
TO-236-3
Series
Transistoren, Bipolar (BJT, Single)
+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification BC856B-QVL BC856A
Part Status Active Active
Base Product Number BC856 -
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA -
Voltage - Collector Emitter Breakdown (Max) 65 V -
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) -
DC Current Gain (h FE) (Min) @ Ic, Vce 220 @ 2mA, 5V -
Power - Max 250 mW 250 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Grade Automotive -
Qualification AEC-Q101 -
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
Current - Collector(Ic)(Max) - 100 mA
Voltage - Collector Emitter Breakdown(Max) - 65 V
Vce Saturation(Max) @ Ib Ic - 650mV @ 5mA, 100mA
Current - Collector Cutoff(Max) - 15nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce - 125 @ 2mA, 5V
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