BC856B-QVL vs BC856B-QR

Dieser detaillierte Vergleich von BC856B-QVL und BC856B-QR bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

BC856B-QVL

Nexperia USA Inc.

Lifecycle: Active
Stock: 7501 Stückzahl
Series: Bipolare Transistoren (BJT-Single Bipolar Transistors)

+Stückliste Anfrage

Part B

BC856B-QR

Nexperia USA Inc.

Lifecycle: Active
Stock: 3837 Stückzahl
Package: TO-236-3
Series: Transistoren, Bipolar (BJT, Single)

+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	BC856B-QVL	BC856B-QR
Part Status	Active	Active
Base Product Number	BC856	-
Transistor Type	PNP	PNP
Current - Collector (Ic) (Max)	100 mA	-
Voltage - Collector Emitter Breakdown (Max)	65 V	-
Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA	-
Current - Collector Cutoff (Max)	15nA (ICBO)	-
DC Current Gain (h FE) (Min) @ Ic, Vce	220 @ 2mA, 5V	-
Power - Max	250 mW	250 mW
Frequency - Transition	100MHz	100MHz
Operating Temperature	150°C (TJ)	150°C (TJ)
Grade	Automotive	-
Qualification	AEC-Q101	-
Mounting Type	Surface Mount	Surface Mount
Packaging	Cut Tape (CT), Tape & Reel (TR)	-
Supplier	-	Nexperia USA Inc.
Series	-	Automotive, AEC-Q101
Current - Collector(Ic)(Max)	-	100 mA
Voltage - Collector Emitter Breakdown(Max)	-	65 V
Vce Saturation(Max) @ Ib Ic	-	650mV @ 5mA, 100mA
Current - Collector Cutoff(Max)	-	15nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce	-	220 @ 2mA, 5V

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