CSD17303Q5 vs CSD17310Q5A

Dieser detaillierte Vergleich von CSD17303Q5 und CSD17310Q5A bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

CSD17303Q5

Texas Instruments

Lifecycle
Active
Stock
4931 Stückzahl
Series
Transistoren von FETs, MOSFETs von einzelnen FETs, MOSFETs
+Stückliste Anfrage
Part B

CSD17310Q5A

Texas Instruments

Lifecycle
Active
Stock
5654 Stückzahl
Package
TDFN-8
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification CSD17303Q5 CSD17310Q5A
Series NexFET™ NexFET™
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 100A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V -
Rds On (Max) @ Id, Vgs 2.4mOhm @ 25A, 8V -
Vgs(th) (Max) @ Id 1.6V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 4.5 V -
Vgs (Max) +10V, -8V -
Input Capacitance (Ciss) (Max) @ Vds 3420 pF @ 15 V -
Power Dissipation (Max) 3.2W (Ta) 3.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Bulk -
Current - Continuous Drain(Id) @ 25°C - 21A (Ta), 100A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 3V, 8V
Rds On(Max) @ Id Vgs - 5.1mOhm @ 20A, 8V
Vgs(th)(Max) @ Id - 1.8V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 11.6 nC @ 4.5 V
Vgs(Max) - +10V, -8V
Input Capacitance(Ciss)(Max) @ Vds - 1560 pF @ 15 V
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