CSD18511Q5A vs CSD18534Q5A

Dieser detaillierte Vergleich von CSD18511Q5A und CSD18534Q5A bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

CSD18511Q5A

Texas Instruments

Lifecycle
Active
Stock
1931 Stückzahl
Series
Transistoren von FETs, MOSFETs von einzelnen FETs, MOSFETs
+Stückliste Anfrage
Part B

CSD18534Q5A

Texas Instruments

Lifecycle
Active
Stock
2842 Stückzahl
Package
TDFN-8
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification CSD18511Q5A CSD18534Q5A
Series NexFET™ NexFET™
Part Status Active Active
Base Product Number CSD18511 -
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 159A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 3.5mOhm @ 24A, 4.5V -
Vgs(th) (Max) @ Id 2.45V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 5850 pF @ 10 V -
Power Dissipation (Max) 104W (Tc) 3.1W (Ta), 77W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
Current - Continuous Drain(Id) @ 25°C - 13A (Ta), 50A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 9.8mOhm @ 14A, 10V
Vgs(th)(Max) @ Id - 2.3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 22 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 1770 pF @ 30 V
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