NCP51530BDR2G vs NCP5109BDR2G

Dieser detaillierte Vergleich von NCP51530BDR2G und NCP5109BDR2G bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification NCP51530BDR2G NCP5109BDR2G
Part Status Active Active
Driven Configuration - Half-Bridge
Channel Type - Independent
Number of Drivers - 2
Gate Type - IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 17V 10V ~ 20V
Logic Voltage - VILVIH - 0.8V, 2.3V
Current - Peak Output(Source Sink) - 250mA, 500mA
Input Type - Non-Inverting
High Side Voltage - Max(Bootstrap) - 200 V
Rise / Fall Time(Typ) - 85ns, 35ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number NCP51530 -
Output Configuration Half Bridge (2) -
Applications General Purpose -
Interface Logic, PWM -
Load Type Inductive, Capacitive -
Technology Power MOSFET -
Current - Output / Channel 3.5A -
Current - Peak Output 3A -
Voltage - Load 700V -
Features Bootstrap Circuit -
Fault Protection UVLO -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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