NVMFD5C466NLT1G vs NVMFD5877NLWFT3G

Dieser detaillierte Vergleich von NVMFD5C466NLT1G und NVMFD5877NLWFT3G bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

Anfrage Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification NVMFD5C466NLT1G NVMFD5877NLWFT3G
Part Status Active Obsolete
Technology - MOSFET (Metal Oxide)
Configuration - 2 N-Channel (Dual)
FET Feature Standard Logic Level Gate
Drain to Source Voltage (Vdss) 40V 60V
Current - Continuous Drain (Id) @ 25°C - 6A
Rds On (Max) @ Id, Vgs - 39mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id - 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds - 540pF @ 25V
Power - Max 3W (Ta), 40W (Tc) 3.2W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number - NVMFD5877
Grade - Automotive
Qualification - AEC-Q101
Series Automotive, AEC-Q101 -
FET Type 2 N-Channel (Dual) -
Current - Continuous Drain(Id) @ 25°C 14A (Ta), 52A (Tc) -
Rds On(Max) @ Id Vgs 7.4mOhm @ 10A, 10V -
Vgs(th)(Max) @ Id 2.2V @ 30µA -
Gate Charge(Qg)(Max) @ Vgs 7nC @ 4.5V -
Input Capacitance(Ciss)(Max) @ Vds 997pF @ 25V -
Compare Anfrage