SI2308BDS-T1-GE3 vs SI2305-TP

Dieser detaillierte Vergleich von SI2308BDS-T1-GE3 und SI2305-TP bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part B

SI2305-TP

Micro Commercial Co.

Lifecycle
Active
Stock
6247 Stückzahl
Package
SOT-23
Series
Transistoren von FETs, MOSFETs von Single
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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification SI2308BDS-T1-GE3 SI2305-TP
Series TrenchFET® -
Part Status Obsolete Active
Base Product Number SI2308 -
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 8 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 156mOhm @ 1.9A, 10V -
Vgs(th) (Max) @ Id 3V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 30 V -
Power Dissipation (Max) 1.09W (Ta), 1.66W (Tc) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
Current - Continuous Drain(Id) @ 25°C - 4.1A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 4.5V
Rds On(Max) @ Id Vgs - 90mOhm @ 2A, 1.8V
Vgs(th)(Max) @ Id - 900mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 15 nC @ 4.5 V
Vgs(Max) - ±8V
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