SI2308BDS-T1-GE3 vs SI2302CDS-T1-E3

Dieser detaillierte Vergleich von SI2308BDS-T1-GE3 und SI2302CDS-T1-E3 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification SI2308BDS-T1-GE3 SI2302CDS-T1-E3
Series TrenchFET® TrenchFET®
Part Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 20 V
Current - Continuous Drain(Id) @ 25°C - 2.6A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 2.5V, 4.5V
Rds On(Max) @ Id Vgs - 57mOhm @ 3.6A, 4.5V
Vgs(th)(Max) @ Id - 850mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 5.5 nC @ 4.5 V
Vgs(Max) - ±8V
Power Dissipation (Max) 1.09W (Ta), 1.66W (Tc) 710mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number SI2308 -
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 156mOhm @ 1.9A, 10V -
Vgs(th) (Max) @ Id 3V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 30 V -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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