SI2302CDS-T1-E3

Abbildungen dienen nur als Referenz

SI2302CDS-T1-E3

+Stückliste

MOSFET N-CH 20V 2.6A SOT23-3

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 2.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 57mOhm @ 3.6A, 4.5V
Vgs(th)(Max)@Id 850mV @ 250µA
GateCharge(Qg)(Max)@Vgs 5.5 nC @ 4.5 V
Vgs(Max) ±8V
PowerDissipation(Max) 710mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Übersicht

Description

The SI2302CDS-T1-E3 is a P-channel MOSFET from Vishay, designed for low-voltage, high-efficiency applications. Key features:
- Voltage Rating: -20V (Drain-Source)
- Current Rating: -4.3A (Continuous Drain Current)
- Low On-Resistance: 45mΩ (max at VGS = -4.5V)
- Gate Threshold: -0.65V (typical), enabling low-drive-voltage operation.
- Compact Package: SOT-23 (3-pin), ideal for space-constrained designs.
Common uses include load switching, power management, and battery protection in portable devices, DC-DC converters, and motor control. Its fast switching and low power loss make it suitable for energy-efficient systems.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the SI2302CDS-T1-E3 (P-channel MOSFET, 20V, 3.7A) include:
- AO3401A (20V, 4A)
- DMG2305UX (20V, 4.3A)
- IRLML6402 (12V, 3.7A)
- BSS84 (50V, 0.13A, lower current)
Check datasheets for exact specs like Vgs, Rds(on), and package compatibility before substitution.

Features

The SI2302CDS-T1-E3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -20V (Drain-Source)
- Current Rating: -4.3A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 50mΩ @ VGS = -4.5V
- Gate Threshold Voltage (VGS(th)): -0.7V to -1.5V
- Fast Switching Speed
- Small Package: SOT-23 (Space-saving)
- Low Gate Charge (Qg): 6.5nC (Typical)
- Applications: Power management, load switching, battery protection
Compact and efficient, it’s ideal for portable and low-voltage circuits.

Manufacturer

The SI2302CDS-T1-E3 is manufactured by Vishay Intertechnology, a global leader in semiconductors and passive electronic components. Vishay is known for producing high-performance MOSFETs, diodes, resistors, and capacitors, serving industries like automotive, industrial, computing, and consumer electronics. The company is recognized for innovation, reliability, and broad product portfolios.
The SI2302CDS-T1-E3 is a P-channel MOSFET designed for power management in compact, low-voltage applications.

Application

The SI2302CDS-T1-E3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in compact circuits.
4. Signal Switching – Low-power signal routing in audio/communication systems.
5. Consumer Electronics – Smartphones, tablets, and wearables for power control.
Its small SOT-23 package and low on-resistance make it ideal for space-constrained, energy-efficient applications.

Package

The SI2302CDS-T1-E3 is a MOSFET in a SOT-23-3 surface-mount package. This compact, 3-pin package is widely used for low-power applications, offering small footprint and efficient performance. It's suitable for space-constrained designs like portable electronics.

Produkte, die mit SI2302CDS-T1-E3 zusammenhängen

Verwandter Vergleich

  • Schnellangebot

  • Senden Sie Ihre Angebotsanfrage für SI2302CDS-T1-E3 Mit diesem Formular können Sie uns innerhalb von 12 Stunden kontaktieren.