SI2319DS-T1-E3 vs SI2312BDS-T1-E3

Dieser detaillierte Vergleich von SI2319DS-T1-E3 und SI2312BDS-T1-E3 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

SI2319DS-T1-E3

Vishay Siliconix

Lifecycle
Active
Stock
5584 Stückzahl
Series
Transistoren von FETs, MOSFETs von einzelnen FETs, MOSFETs
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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification SI2319DS-T1-E3 SI2312BDS-T1-E3
Series TrenchFET® TrenchFET®
Part Status Obsolete Active
Base Product Number SI2319 -
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 82mOhm @ 3A, 10V -
Vgs(th) (Max) @ Id 3V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 20 V -
Power Dissipation (Max) 750mW (Ta) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
Current - Continuous Drain(Id) @ 25°C - 3.9A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 1.8V, 4.5V
Rds On(Max) @ Id Vgs - 31mOhm @ 5A, 4.5V
Vgs(th)(Max) @ Id - 850mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 12 nC @ 4.5 V
Vgs(Max) - ±8V
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