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2N7002K-T1-GE3
+StücklisteMOSFET N-CH 60V 300MA TO236
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HerstellerVishay Siliconix
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Herstellerteil #2N7002K-T1-GE3
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Datenblatt 2N7002K-T1-GE3 DataSheet
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Paket SOT23-3
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Auf Lager4371
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 300mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 2Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.6 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 30 pF @ 25 V |
| PowerDissipation(Max) | 350mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Übersicht
Pinout
Pin Functions:
1. Gate (G): Controls the MOSFET's conductivity.
2. Drain (D): Connects to the load (high-side terminal).
3. Source (S): Ground/reference terminal.
Key Features:
- Low threshold voltage (suitable for 3V/5V logic).
- 60V drain-source voltage (VDS).
- Continuous drain current (ID): ~115mA.
- Low on-resistance (RDS(on)).
Commonly used for switching, signal amplification, and load control in low-power applications.
Manufacturer
onsemi is a global semiconductor company specializing in power management, analog, and sensor solutions. They produce a wide range of components, including MOSFETs like the 2N7002K-T1-GE3, which is a small-signal N-channel MOSFET used in switching applications.
The company serves industries such as automotive, industrial, and consumer electronics, focusing on energy-efficient innovations.
