AUIRFS8409TRL

Abbildungen dienen nur als Referenz

AUIRFS8409TRL

+Stückliste

MOSFET N-CH 40V 195A D2PAK

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier Rochester Electronics, LLC
Package / Case Bulk
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 195A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 1.2mOhm @ 100A, 10V
Vgs(th)(Max) @ Id 3.9V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 450 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 14240 pF @ 25 V
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3

Produkte, die mit AUIRFS8409TRL zusammenhängen