Abbildungen dienen nur als Referenz
BC846BWT1G
+StücklisteTRANS NPN 65V 0.1A SC70-3
-
HerstellerOnsemi
-
Herstellerteil #BC846BWT1G
-
Paket SC-70
-
Auf Lager2971
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 100 mA |
| Voltage - Collector Emitter Breakdown(Max) | 65 V |
| Vce Saturation(Max) @ Ib Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff(Max) | 15nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 200 @ 2mA, 5V |
| Power - Max | 150 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
The key specifications of the BC846BWT1G include:
- Maximum Collector Current (Ic): 100 mA
- Maximum Collector-Emitter Voltage (Vce): 65 V
- Maximum Collector-Base Voltage (Vcb): 80 V
- Maximum Emitter-Base Voltage (Veb): 6 V
- Power Dissipation (Pd): 300 mW
- Transition Frequency (fT): Approximately 100 MHz
This transistor comes in a compact SOT-323 package, suitable for surface-mount technology (SMT), making it ideal for compact, high-density circuit designs. The BC846BWT1G is often used in applications such as signal amplification, switching, and as an electronic switch in various consumer electronics, automotive, and industrial controls. Its small size, combined with its capability to handle moderate current and voltage levels, makes it a versatile choice for designers.
Equivalent
Features
1. Voltage Rating: Maximum collector-emitter voltage (Vceo) of 65V.
2. Current Rating: Collector current (Ic) up to 100mA.
3. Power Dissipation: Maximum power dissipation of 150mW.
4. Gain: DC current gain (hFE) typically ranges from 200 to 450 for the B variant.
5. Package: Available in the SOT-323 (SC-70) surface-mount package, providing a compact form factor suitable for space-constrained applications.
6. Transition Frequency: High transition frequency of approximately 100MHz, making it suitable for high-speed switching applications.
7. Temperature Range: Operating junction temperature range from -55°C to +150°C.
8. Low Noise: Designed to operate with low noise levels, enhancing performance in analog circuits.
These features make the BC846BWT1G suitable for amplification and switching applications in consumer electronics, industrial equipment, and communication devices.
Pinout
1. Pin 1 (Base): This pin is used to control the transistor. A small current or voltage applied to the base controls the larger current flow between the collector and emitter.
2. Pin 2 (Emitter): This is the pin through which the current leaves the transistor. It is usually connected to the ground or a negative voltage in NPN transistors.
3. Pin 3 (Collector): This pin is connected to the load. The current flows from the collector to the emitter when the transistor is in the "on" state.
In summary, the BC846BWT1G is a 3-pin device where each pin serves a specific function: base for control, emitter for current flow out, and collector for current flow in from the load.
Manufacturer
onsemi is known for its emphasis on energy-efficient innovations and technologies that enable smart power and intelligent sensing solutions. The company operates globally, serving customers across many industries with a vast portfolio of semiconductor products. Its commitment to innovation and sustainability makes it a significant player in the semiconductor industry.