BCP56T1G

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BCP56T1G

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TRANS NPN 80V 1A SOT223

  • HerstellerOnsemi

  • Herstellerteil #BCP56T1G

  • Paket SOT-223-4

  • Auf Lager1856

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Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 1 A
Voltage-CollectorEmitterBreakdown(Max) 80 V
VceSaturation(Max)@IbIc 500mV @ 50mA, 500mA
Current-CollectorCutoff(Max) 100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 40 @ 150mA, 2V
Power-Max 1.5 W
Frequency-Transition 130MHz
OperatingTemperature -65°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-261-4, TO-261AA

Übersicht

Description

BCP56T1G is a specific designation that may pertain to a component or product in the electronics or semiconductor industry, though its exact specification isn't widely documented in public databases. When dealing with such designations, it's crucial to consult the manufacturer's datasheet or technical documentation for detailed information. This will provide insights into features like electrical characteristics, applications, and pin configurations.
For instance, in typical cases, similar naming conventions often refer to components like transistors, diodes, or integrated circuits. These components might be used in various applications including amplification, switching, or signal processing in electronic circuits.
When handling or implementing such components, ensure proper understanding of its parameters to avoid circuit design errors. Always cross-check the part number with the supplier or use trusted electronic component distributors to verify its specifications and compatibility with your intended use. For further technical details, consider reaching out directly to the manufacturer or authorized distributors.

Equivalent

The BCP56T1G is a NPN Bipolar Junction Transistor (BJT). Equivalent products include:
1. BC817 series
2. BC337
3. 2N3904
4. 2N4401
These equivalents might differ slightly in terms of maximum ratings or gain, so it's essential to compare their datasheets to ensure they fit your specific application requirements.

Features

The BCP56T1G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Here are some of its key features:
1. Package Type: It typically comes in a SOT-223 package, which is suitable for surface mounting on PCBs.
2. Collector-Emitter Voltage (Vceo): It has a maximum Vceo of 80V, allowing it to handle moderate voltage levels.
3. Collector Current (Ic): It can support a continuous collector current of up to 1A, making it suitable for driving moderate loads.
4. Power Dissipation: The device can dissipate up to 1W of power, which helps in applications where larger power handling is required.
5. Transition Frequency (fT): It has a transition frequency of around 100 MHz, indicating its capability for high-speed switching applications.
6. Thermal Resistance: The junction-to-ambient thermal resistance is relatively low, enhancing reliability in thermal management.
7. Gain (hFE): The DC current gain typically ranges from 100 to 250, which is crucial for achieving the desired amplification.
These features make the BCP56T1G suitable for a variety of electronic circuits that require reliable switching and amplification.

Pinout

The BCP56T1G is a NPN bipolar junction transistor (BJT) commonly used for amplification and switching applications. It typically comes in a SOT-223 package, which has three pins. The pin configuration is as follows:
1. Pin 1 (Base): This pin is used to control the transistor's operation. A small current or voltage applied to the base controls the larger current flow between the collector and emitter.
2. Pin 2 (Collector): The collector is the main current-carrying electrode. A voltage applied here allows current to flow through the transistor when the base is activated.
3. Pin 3 (Emitter): The emitter is the electrode through which current leaves the transistor. It is usually connected to the ground or a negative voltage reference in a circuit.
The BCP56T1G is often used in medium power applications, where it can handle up to 1 A of collector current and 80 V of collector-emitter voltage.

Manufacturer

The BCP56T1G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is an American semiconductor supplier company that provides a wide range of products, including power and signal management, logic, discrete, and custom devices for automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power applications. The company focuses on technologies that help deliver efficiency, performance, and sustainability across various sectors.

Application

The BCP56T1G is a NPN bipolar junction transistor commonly used in various applications due to its high current gain and low saturation voltage. Typical applications include amplification and switching purposes in electronic circuits. It is often utilized in audio amplifiers, signal processing, and power management systems. Additionally, the BCP56T1G is employed in automotive electronics, industrial equipment, and consumer electronics, where efficient current control and amplification are required. Its robust performance makes it suitable for use in general-purpose amplification and low-power switching applications.

Package

The BCP56T1G is a NPN bipolar junction transistor (BJT) commonly used in amplification and switching applications. It is typically housed in a SOT-223 package, which is a surface-mount package type known for its ability to dissipate heat efficiently.

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