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BC847ALT1G
+StücklisteTRANS NPN 45V 0.1A SOT23-3
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HerstellerOnsemi
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Herstellerteil #BC847ALT1G
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Paket SOT-23-3
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Auf Lager4675
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 100 mA |
| Voltage - Collector Emitter Breakdown(Max) | 45 V |
| Vce Saturation(Max) @ Ib Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff(Max) | 15nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 110 @ 2mA, 5V |
| Power - Max | 300 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
Key specifications include a maximum collector current of 100 mA and a maximum collector-emitter voltage of 45 V. It has a high current gain (hFE), typically ranging from 110 to 800, which makes it efficient for signal amplification. The BC847ALT1G can operate over a broad temperature range, usually from -55°C to +150°C, ensuring functionality in various environmental conditions.
This transistor is commonly used in consumer electronics, automotive circuits, and communication devices due to its versatility and performance. It is often selected for applications requiring low to medium power, such as signal processing, voltage regulation, and low power switching.
Equivalent
Features
1. Package Type: It comes in a compact SOT-23 surface-mount package, which is suitable for high-density board designs.
2. Collector-Emitter Voltage (Vceo): It has a maximum Vceo rating of 45V, allowing for moderate voltage applications.
3. Collector Current (Ic): The maximum continuous collector current is 100mA, suitable for low-power applications.
4. DC Current Gain (hFE): The transistor provides a current gain of approximately 110 to 800, depending on the specific variant and operating conditions.
5. Transition Frequency (fT): The transition frequency is typically around 100 MHz, making it suitable for high-frequency operations.
6. Power Dissipation: It has a power dissipation rating of 250 mW, providing adequate heat tolerance for small-signal tasks.
7. Operating Temperature: The device can operate within a temperature range of -55°C to +150°C, supporting a wide range of environments.
These features make the BC847ALT1G ideal for various electronic applications, including signal processing and microcontroller interfacing.
Pinout
1. Pin 1 (Base): This is the control terminal for the transistor. By applying a small current to the base, you can control the larger current flow between the collector and the emitter.
2. Pin 2 (Emitter): The emitter is the terminal through which carriers (electrons for NPN) leave the transistor. It is typically connected to the negative side of the circuit.
3. Pin 3 (Collector): The collector is the terminal through which the majority carriers enter the transistor. It is generally connected to the positive side of the power supply.
The BC847ALT1G is used in various switching and amplification applications, offering efficient performance due to its low current and voltage requirements, making it ideal for portable electronic devices.