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BC857CLT1G
+StücklisteTRANS PNP 45V 0.1A SOT23-3
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HerstellerOnsemi
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Herstellerteil #BC857CLT1G
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Paket TO-236-3
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Auf Lager7054
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Spezifikationen
| Attribut | Wert |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 100 mA |
| Voltage - Collector Emitter Breakdown(Max) | 45 V |
| Vce Saturation(Max) @ Ib Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff(Max) | 15nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 420 @ 2mA, 5V |
| Power - Max | 300 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
Key specs (typical):
- Vceo: about 45 V
- Ic: up to ~100 mA
- hFE: broad range depending on grade and temperature (C grade typically hundreds)
Package: available in surface‑mount (SOT‑23) and other formats depending on supplier; check the datasheet for exact pinout.
Applications: general purpose switching, signal amplification, level shifting, and small high‑side/low‑side switch tasks in consumer electronics and embedded projects.
Note: exact electrical ranges and pin configuration vary by manufacturer, so consult the specific datasheet for your supplier’s BC857CLT1G variant.
Equivalent
- BC857A/B/C (same family, different gain)
- BC856 (PNP, similar ratings)
- BC807 (PNP, similar voltage/current)
- 2N3906 (PNP, through‑hole)
- MMBT3906 / PMBT3906 (SMD equivalents)
Note: packaging varies (TO‑92 vs SOT‑23).
Features
- PNP, silicon, general-purpose small-signal transistor
- Package: SOT-23 (SOT-23-3), RoHS-compliant
- Voltage/current ratings: Vceo ≈ -45 V; Ic ≈ -100 mA
- Power: Ptot ≈ 250 mW
- Gain: hFE group C (high gain) ≈ 420–800 (at Ic = 2 mA, Vce ≈ 5 V)
- Low-noise, suitable for switching and amplification
- Temperature range: typically -55°C to +150°C
- Complement: BC847 (NPN)
- Variant code LT1G indicates packaging/tape-reel options
Ideal for general switching/amplification in compact, low-power circuits.
Pinout
Function: Single PNP bipolar junction transistor (general‑purpose). The three pins are Emitter, Base, and Collector used for switching and amplification in low‑power circuits.
Manufacturer
- What kind of company: A global semiconductor company that designs and manufactures discrete semiconductors (like transistors), diodes, and logic devices.
Application
- Small‑signal amplification and inversion in audio/telecom paths
- High‑side switching and level shifting in battery-powered devices
- Relay/coil driver and other signaling interfaces
- Biasing networks, emitter-follower stages, and general signal conditioning
- Compact, surface‑mounted circuitry in consumer electronics and instrumentation
Use where a low‑noise, low‑power PNP switch/amplifier is needed in a small package.