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BSC047N08NS3GATMA1
+StücklisteMOSFET N-CH 80V 18A/100A TDSON
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HerstellerInfineon-Technologien
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Herstellerteil #BSC047N08NS3GATMA1
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Auf Lager3834
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Spezifikationen
| Attribut | Wert |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 40 V |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8-1 |
| Package / Case | 8-PowerTDFN |
| Base Product Number | BSC047 |
Übersicht
Description
BSC047N08NS3GATMA1 is a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance power applications. It typically features a voltage rating of 650V and a current rating of approximately 47A. SiC technology allows for higher efficiency and thermal performance compared to traditional silicon-based devices, making it suitable for applications in electric vehicles, industrial motor drives, and renewable energy systems.
Key attributes of the BSC047N08NS3GATMA1 include low on-resistance, fast switching speeds, and the ability to operate at high temperatures, which contribute to reduced energy losses and improved system reliability. It is packaged in a DPAK or TO-220 format, facilitating easy integration into various circuit designs. Overall, this MOSFET is an excellent choice for engineers seeking to enhance power conversion efficiency and thermal management in advanced electronic systems.
Key attributes of the BSC047N08NS3GATMA1 include low on-resistance, fast switching speeds, and the ability to operate at high temperatures, which contribute to reduced energy losses and improved system reliability. It is packaged in a DPAK or TO-220 format, facilitating easy integration into various circuit designs. Overall, this MOSFET is an excellent choice for engineers seeking to enhance power conversion efficiency and thermal management in advanced electronic systems.
Equivalent
The BSC047N08NS3GATMA1 is an N-channel MOSFET. Equivalent products include the IRF3205, STP47NF06, and FQP50N06. For precise replacements, check parameters like voltage, current rating, R_DS(on), and package type. Always confirm compatibility for your specific application.
Features
The BSC047N08NS3GATMA1 is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It offers a maximum drain-source voltage (VDS) of 80V, allowing it to handle significant voltage levels in circuits.
2. Current Handling: The device has a continuous drain current (ID) rating of up to 47A, providing robust performance in high-current applications.
3. Low RDS(on): With a low on-resistance (RDS(on)) of approximately 4.7 mΩ at VGS = 10V, it minimizes conduction losses, enhancing efficiency.
4. Thermal Management: The package design aids in effective heat dissipation, making it suitable for demanding thermal environments.
5. Fast Switching: It is optimized for fast switching applications, improving overall performance in switching power supplies and converters.
6. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) is low, allowing for easy drive requirements in various control circuits.
These features make the BSC047N08NS3GATMA1 ideal for industrial, automotive, and consumer electronics applications.
1. Voltage Rating: It offers a maximum drain-source voltage (VDS) of 80V, allowing it to handle significant voltage levels in circuits.
2. Current Handling: The device has a continuous drain current (ID) rating of up to 47A, providing robust performance in high-current applications.
3. Low RDS(on): With a low on-resistance (RDS(on)) of approximately 4.7 mΩ at VGS = 10V, it minimizes conduction losses, enhancing efficiency.
4. Thermal Management: The package design aids in effective heat dissipation, making it suitable for demanding thermal environments.
5. Fast Switching: It is optimized for fast switching applications, improving overall performance in switching power supplies and converters.
6. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) is low, allowing for easy drive requirements in various control circuits.
These features make the BSC047N08NS3GATMA1 ideal for industrial, automotive, and consumer electronics applications.
Pinout
The BSC047N08NS3GATMA1 is a power MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's switching; applying a voltage here allows current to flow from drain to source.
2. Drain (D): Connection point for the load current; the main current-carrying terminal.
3. Source (S): The terminal through which the current exits; typically connected to ground in switching applications.
4. Gate (G): Another gate connection for dual-gate configurations or similar applications, depending on specific device configuration.
5. Source (S): Another source connection, again applicable in specific configurations.
The BSC047N08NS3GATMA1 is designed for applications requiring high efficiency and fast switching, such as power supplies and motor drivers. It features low on-resistance and high-speed operation, making it suitable for various power management tasks. Always consult the manufacturer's datasheet for detailed electrical characteristics and specific application guidance.
1. Gate (G): Controls the MOSFET's switching; applying a voltage here allows current to flow from drain to source.
2. Drain (D): Connection point for the load current; the main current-carrying terminal.
3. Source (S): The terminal through which the current exits; typically connected to ground in switching applications.
4. Gate (G): Another gate connection for dual-gate configurations or similar applications, depending on specific device configuration.
5. Source (S): Another source connection, again applicable in specific configurations.
The BSC047N08NS3GATMA1 is designed for applications requiring high efficiency and fast switching, such as power supplies and motor drivers. It features low on-resistance and high-speed operation, making it suitable for various power management tasks. Always consult the manufacturer's datasheet for detailed electrical characteristics and specific application guidance.
Manufacturer
The manufacturer of the BSC047N08NS3GATMA1 is Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in producing a wide range of semiconductor solutions, including power management, automotive electronics, and security technologies. Infineon serves various industries, including automotive, industrial, consumer electronics, and communication sectors. Its products are designed to enhance energy efficiency, improve performance, and ensure safety in electronic applications. Infineon is recognized for its innovation and commitment to developing advanced technologies that support the growing demand for smart, connected solutions.
Application
The BSC047N08NS3GATMA1 is a N-channel MOSFET designed for applications such as power management, motor control, and DC-DC converters. Its low on-resistance and high-speed switching capabilities make it suitable for use in power supply units, battery management systems, and electric vehicle applications. Additionally, it can be employed in high-efficiency switching regulators and inverters for renewable energy systems. Overall, its versatility allows for effective performance in various electronic circuits requiring efficient power handling.
Package
The BSC047N08NS3GATMA1 is packaged in a TO-220 format, which is a commonly used package type for power semiconductors, providing good thermal performance and ease of mounting.
