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BSS123LT1G
+StücklisteMOSFET N-CH 100V 170MA SOT23-3
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HerstellerOnsemi
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Herstellerteil #BSS123LT1G
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Paket SOT-23-3
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Auf Lager6441
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 170mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 6Ohm @ 100mA, 10V |
| Vgs(th)(Max) @ Id | 2.6V @ 1mA |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 20 pF @ 25 V |
| Power Dissipation (Max) | 225mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Übersicht
Description
The BSS123LT1G is an N-channel enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplifying purposes. This device is part of ON Semiconductor's product line and is well-regarded for its efficiency and reliability in low-power applications.
Key features of the BSS123LT1G include a low on-resistance, fast switching speeds, and a compact SOT-23 package, making it suitable for space-constrained designs. It operates with a maximum drain-source voltage (V_DS) of 100V and can handle a continuous drain current (I_D) of up to 170mA. These specifications make it ideal for use in portable electronics, signal processing, and power management systems.
The BSS123LT1G also features a gate-source voltage (V_GS) rating of ±20V, ensuring robustness against gate voltage spikes. Its design allows for efficient operation in various environments, contributing to extended battery life and reduced energy consumption in devices where it's implemented. Overall, the BSS123LT1G is a versatile component suitable for a broad range of applications.
Key features of the BSS123LT1G include a low on-resistance, fast switching speeds, and a compact SOT-23 package, making it suitable for space-constrained designs. It operates with a maximum drain-source voltage (V_DS) of 100V and can handle a continuous drain current (I_D) of up to 170mA. These specifications make it ideal for use in portable electronics, signal processing, and power management systems.
The BSS123LT1G also features a gate-source voltage (V_GS) rating of ±20V, ensuring robustness against gate voltage spikes. Its design allows for efficient operation in various environments, contributing to extended battery life and reduced energy consumption in devices where it's implemented. Overall, the BSS123LT1G is a versatile component suitable for a broad range of applications.
Equivalent
The BSS123LT1G is an N-channel MOSFET commonly used for switching applications. Equivalent products include:
1. 2N7002: A similar N-channel MOSFET with comparable voltage and current ratings.
2. BSS138: Another N-channel MOSFET with similar specifications.
3. PMV20XN: Offers similar functionality and electrical characteristics.
4. IRLML2402: Provides similar performance in small-signal applications.
Always verify parameters like voltage, current, and packaging to ensure suitability for your application.
1. 2N7002: A similar N-channel MOSFET with comparable voltage and current ratings.
2. BSS138: Another N-channel MOSFET with similar specifications.
3. PMV20XN: Offers similar functionality and electrical characteristics.
4. IRLML2402: Provides similar performance in small-signal applications.
Always verify parameters like voltage, current, and packaging to ensure suitability for your application.
Features
The BSS123LT1G is an N-channel MOSFET transistor commonly used for switching and amplification applications. Here are its key features:
1. Type: N-Channel MOSFET.
2. Drain-Source Voltage (Vds): 100V, allowing it to handle high voltage applications.
3. Continuous Drain Current (Id): Up to 170 mA, suitable for low to moderate current applications.
4. Gate-Source Voltage (Vgs): ±20V, providing a wide range for gate operation.
5. Rds(on): Approximately 6Ω at Vgs = 10V, indicating its resistance when fully on.
6. Package: The device is available in SOT-23, a compact surface-mount package ideal for space-constrained PCBs.
7. Operating Temperature Range: -55°C to 150°C, making it suitable for a wide range of environmental conditions.
8. Applications: Commonly used in signal switching, load switching, and level shifting in various electronic circuits.
These features make the BSS123LT1G versatile for various electronic applications, especially where compact size and efficient switching are critical.
1. Type: N-Channel MOSFET.
2. Drain-Source Voltage (Vds): 100V, allowing it to handle high voltage applications.
3. Continuous Drain Current (Id): Up to 170 mA, suitable for low to moderate current applications.
4. Gate-Source Voltage (Vgs): ±20V, providing a wide range for gate operation.
5. Rds(on): Approximately 6Ω at Vgs = 10V, indicating its resistance when fully on.
6. Package: The device is available in SOT-23, a compact surface-mount package ideal for space-constrained PCBs.
7. Operating Temperature Range: -55°C to 150°C, making it suitable for a wide range of environmental conditions.
8. Applications: Commonly used in signal switching, load switching, and level shifting in various electronic circuits.
These features make the BSS123LT1G versatile for various electronic applications, especially where compact size and efficient switching are critical.
Pinout
The BSS123LT1G is a N-channel MOSFET transistor. It is typically housed in a SOT-23 package and has three pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the transistor. A voltage applied to the gate controls the flow of current between the drain and source.
2. Source (S): This pin is the source of the charge carriers (usually electrons for N-channel MOSFETs). It is typically connected to the ground or a lower potential in a circuit.
3. Drain (D): This pin is where the current flows out of the transistor. When the MOSFET is on, current flows from the drain to the source in N-channel devices.
The BSS123LT1G is commonly used for switching applications and load switching in low-power, low-voltage applications due to its small size and efficient performance.
1. Gate (G): This pin is used to control the transistor. A voltage applied to the gate controls the flow of current between the drain and source.
2. Source (S): This pin is the source of the charge carriers (usually electrons for N-channel MOSFETs). It is typically connected to the ground or a lower potential in a circuit.
3. Drain (D): This pin is where the current flows out of the transistor. When the MOSFET is on, current flows from the drain to the source in N-channel devices.
The BSS123LT1G is commonly used for switching applications and load switching in low-power, low-voltage applications due to its small size and efficient performance.
Manufacturer
The BSS123LT1G is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading provider of semiconductor solutions. It specializes in energy-efficient innovations, supplying a broad portfolio of products, including power and signal management, logic, discrete, and custom devices for various sectors such as automotive, communications, computing, consumer products, industrial, medical, and military/aerospace. The company is known for its focus on intelligent power and sensing technologies, which aim to address challenges in different industries by improving performance and efficiency.
Application
The BSS123LT1G is a small-signal MOSFET commonly used in various applications due to its low on-resistance and fast switching capabilities. Key application areas include:
1. Switching Circuits: Used in power management for efficient switching operations.
2. Level Shifting: Ideal for converting voltages between different parts of a circuit.
3. Signal Amplification: Used in small signal amplification tasks.
4. Load Switching: Suitable for controlling loads in portable electronics.
5. Battery-Powered Devices: Helps in power conservation by efficient switching and low power loss.
6. Consumer Electronics: Applied in devices like smartphones and wearables for various control functions.
These applications benefit from the MOSFET's compact package and reliable performance.
1. Switching Circuits: Used in power management for efficient switching operations.
2. Level Shifting: Ideal for converting voltages between different parts of a circuit.
3. Signal Amplification: Used in small signal amplification tasks.
4. Load Switching: Suitable for controlling loads in portable electronics.
5. Battery-Powered Devices: Helps in power conservation by efficient switching and low power loss.
6. Consumer Electronics: Applied in devices like smartphones and wearables for various control functions.
These applications benefit from the MOSFET's compact package and reliable performance.
Package
The BSS123LT1G is typically available in a SOT-23 package type. This package is small, surface-mounted, and commonly used for housing discrete semiconductor components, such as MOSFETs, in compact electronic circuits.
