BSS123NH6327

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BSS123NH6327

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Attribut Wert
Manufacturer Infineon Technologies
Package / Case TO-236-3
Operating Temperature -55℃~+150℃
Rds(on) 6Ω@10V,0.19A
Drain to Source Voltage (Vdss) 100V
Pd - Power Dissipation 500mW
Current - Continuous Drain(Id) 190mA
Reverse Transfer Capacitance (Crss @ Vds) 3.1pF@25V
Gate Threshold Voltage (Vgs(th) @ Id) 1.8V
Gate Charge(Qg) 900pC@10V
Number 1 N-channel
Input Capacitance(Ciss) 20.9pF@25V

Übersicht

Description

BSS123NH6327 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. This MOSFET features low on-resistance and fast switching speeds, making it suitable for power management applications, including DC-DC converters and power supplies. It typically operates with a maximum drain-source voltage of around 30V and can handle a continuous drain current, usually in the range of several amps.
The device's gate voltage threshold is low, allowing it to be driven directly by logic-level signals, which enhances its versatility in various applications. Its compact size and efficiency make it ideal for consumer electronics, automotive, and industrial applications.
For optimal performance, it’s essential to refer to the datasheet for specific electrical characteristics, thermal management, and maximum ratings. Overall, the BSS123NH6327 is a reliable choice for designers seeking efficient and compact solutions in electronic circuit design.

Equivalent

The BSS123NH6327 is a N-channel MOSFET. Equivalent products include the BSS123, BSS138, 2N7000, and 2N7002. For similar specifications, consider the IRF520 or BS170 for different packages and ratings. Always verify the datasheets for specific electrical characteristics to ensure compatibility in your application.

Features

The BSS123NH6327 is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 45V, making it suitable for a range of applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 10A, enabling it to drive moderate loads.
3. Low On-Resistance: It exhibits a low R_DS(on), typically around 0.1Ω, which minimizes power loss during operation and enhances efficiency.
4. Fast Switching Speed: Designed for efficient switching capabilities, it enables high-frequency applications.
5. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for easy interfacing with low-voltage control signals.
6. Package: It is usually available in a TO-220 package, ensuring good thermal performance.
These features make the BSS123NH6327 ideal for applications like power management, motor control, and DC-DC converters.

Pinout

The BSS123NH6327 is an N-channel MOSFET with a total of three pins. Its pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters from the load. It connects to the output side of the circuit.
3. Source (S): This pin is where the current exits the MOSFET and typically connects to ground or the negative side of the power supply.
The BSS123 is commonly used for switching and amplification applications in low-voltage environments. Its compact size and efficiency make it suitable for various electronic projects.

Manufacturer

The BSS123NH6327 is a product manufactured by Nexperia, a semiconductor company. Nexperia specializes in the production of discrete, logic, and MOSFET components. The company was formed in 2017 as a spin-off from NXP Semiconductors and focuses on providing high-performance semiconductor solutions for a wide range of applications, including automotive, industrial, and consumer electronics. Nexperia is known for its expertise in discrete devices, integrated circuits, and application-specific standard products, emphasizing quality, reliability, and efficiency in its manufacturing processes.

Application

BSS123NH6327 is an N-channel MOSFET primarily used in low-voltage applications. Its application areas include:
1. Power Management: Efficient switching in power supplies and voltage regulation circuits.
2. Motor Control: Used in driving motors in robotics and automation systems.
3. LED Drivers: Effective for controlling LED lighting systems.
4. Signal Switching: Utilized in signal routing in communication devices.
5. Consumer Electronics: Found in various electronic devices for efficient power handling.
Overall, its characteristics make it suitable for applications requiring low on-resistance and fast switching capabilities.

Package

The BSS123NH6327 is typically packaged in a SOT-23 package, which is a small, surface-mount package suitable for various electronic applications.

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