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BSZ160N10NS3G
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HerstellerInfineon-Technologien
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Herstellerteil #BSZ160N10NS3G
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Auf Lager2525
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Spezifikationen
| Attribut | Wert |
| Manufacturer | Infineon Technologies |
| Package / Case | TSDSON-8(3.3x3.3) |
| Rds(on) | 16mΩ@10V,20A |
| Drain to Source Voltage (Vdss) | 100V |
| Pd - Power Dissipation | 2.1W |
| Current - Continuous Drain(Id) | 8A |
| Type | 1 N-channel |
| Gate Threshold Voltage (Vgs(th) @ Id) | 3.5V |
Übersicht
Description
This MOSFET offers low on-resistance (R_DS(on)), which minimizes power loss during operation, enhancing the overall efficiency of electronic circuits. Its fast switching capabilities make it ideal for applications requiring rapid response times, such as in pulse-width modulation (PWM) control.
The BSZ160N10NS3G is housed in a TO-220 package, facilitating effective heat dissipation and ensuring reliable performance under demanding conditions. It is commonly utilized in automotive, industrial, and consumer electronics, providing robustness in high-temperature environments. Overall, its combination of high current capacity, low resistance, and fast switching speeds makes it a popular choice among engineers for power electronic solutions.
Equivalent
1. IRF160
2. STP160NF10
3. IPP160N10N3
4. FQP160N10
Always verify specifications such as voltage, current, Rds(on), and package type to ensure compatibility for specific applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, suitable for various power management applications.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 160A, making it ideal for high current applications.
3. R_DS(on): Low on-resistance (~10 mΩ) at a gate-source voltage (V_GS) of 10V, which contributes to reduced power losses during operation.
4. Fast Switching: Designed for efficient switching, enhancing performance in applications such as converters and inverters.
5. Package: Offered in TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Thermal Resistance: Low thermal resistance ensures efficient heat management.
7. Applications: Suitable for use in power supplies, motor drives, and other industrial applications.
These features make the BSZ160N10NS3G an excellent choice for demanding electronic systems requiring reliable and efficient power management.
Pinout
1. Gate (G): Controls the MOSFET’s operation by turning it on or off.
2. Drain (D): The terminal through which the current flows when the device is in the 'on' state.
3. Source (S): The terminal connected to the ground or the negative side of the power supply.
This MOSFET is designed for high efficiency and fast switching, making it suitable for applications such as DC-DC converters, power supplies, and motor drivers. Its low on-resistance and high voltage rating enhance performance in high-power applications.
Manufacturer
Application
1. Switching Power Supplies: Enhancing efficiency in DC-DC converters and other power supply circuits.
2. Motor Drives: Used in brushless DC motors for precise control and efficiency.
3. DC-AC Inverters: Employed in renewable energy systems like solar inverters.
4. LED Drivers: Facilitating efficient control in LED lighting applications.
5. Automotive Applications: Utilized in electric vehicle power systems and battery management.
Its high efficiency and fast switching capabilities make it suitable for various high-performance applications.