BSZ160N10NS3G

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BSZ160N10NS3G

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Spezifikationen

Attribut Wert
Manufacturer Infineon Technologies
Package / Case TSDSON-8(3.3x3.3)
Rds(on) 16mΩ@10V,20A
Drain to Source Voltage (Vdss) 100V
Pd - Power Dissipation 2.1W
Current - Continuous Drain(Id) 8A
Type 1 N-channel
Gate Threshold Voltage (Vgs(th) @ Id) 3.5V

Übersicht

Description

The BSZ160N10NS3G is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various power management applications. With a voltage rating of 100V and a continuous drain current of 160A, it is suitable for use in high-efficiency power supplies, DC-DC converters, and motor drives.
This MOSFET offers low on-resistance (R_DS(on)), which minimizes power loss during operation, enhancing the overall efficiency of electronic circuits. Its fast switching capabilities make it ideal for applications requiring rapid response times, such as in pulse-width modulation (PWM) control.
The BSZ160N10NS3G is housed in a TO-220 package, facilitating effective heat dissipation and ensuring reliable performance under demanding conditions. It is commonly utilized in automotive, industrial, and consumer electronics, providing robustness in high-temperature environments. Overall, its combination of high current capacity, low resistance, and fast switching speeds makes it a popular choice among engineers for power electronic solutions.

Equivalent

The BSZ160N10NS3G is an N-channel MOSFET. Equivalent products include:
1. IRF160
2. STP160NF10
3. IPP160N10N3
4. FQP160N10
Always verify specifications such as voltage, current, Rds(on), and package type to ensure compatibility for specific applications.

Features

The BSZ160N10NS3G is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, suitable for various power management applications.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 160A, making it ideal for high current applications.
3. R_DS(on): Low on-resistance (~10 mΩ) at a gate-source voltage (V_GS) of 10V, which contributes to reduced power losses during operation.
4. Fast Switching: Designed for efficient switching, enhancing performance in applications such as converters and inverters.
5. Package: Offered in TO-220 package, providing good thermal performance and ease of heat dissipation.
6. Thermal Resistance: Low thermal resistance ensures efficient heat management.
7. Applications: Suitable for use in power supplies, motor drives, and other industrial applications.
These features make the BSZ160N10NS3G an excellent choice for demanding electronic systems requiring reliable and efficient power management.

Pinout

The BSZ160N10NS3G is a N-channel MOSFET with a pin count of 4. Its primary functions include switching and amplification in power management applications. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET’s operation by turning it on or off.
2. Drain (D): The terminal through which the current flows when the device is in the 'on' state.
3. Source (S): The terminal connected to the ground or the negative side of the power supply.
This MOSFET is designed for high efficiency and fast switching, making it suitable for applications such as DC-DC converters, power supplies, and motor drivers. Its low on-resistance and high voltage rating enhance performance in high-power applications.

Manufacturer

The BSZ160N10NS3G is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete, logic, and MOSFET devices, focusing on delivering high-quality semiconductor solutions for a wide range of applications. The company was established as a spin-off from NXP Semiconductors in 2017 and is known for its expertise in manufacturing and providing efficient semiconductor technologies. Nexperia’s products are used in various sectors, including automotive, industrial, consumer electronics, and telecommunications, contributing to the development of reliable and energy-efficient electronic systems.

Application

The BSZ160N10NS3G is an N-channel MOSFET primarily used in power management applications. Its key areas include:
1. Switching Power Supplies: Enhancing efficiency in DC-DC converters and other power supply circuits.
2. Motor Drives: Used in brushless DC motors for precise control and efficiency.
3. DC-AC Inverters: Employed in renewable energy systems like solar inverters.
4. LED Drivers: Facilitating efficient control in LED lighting applications.
5. Automotive Applications: Utilized in electric vehicle power systems and battery management.
Its high efficiency and fast switching capabilities make it suitable for various high-performance applications.

Package

The BSZ160N10NS3G is packaged in a TO-220 format, which is a standard package type for power transistors. This package provides good thermal performance and is suitable for heat dissipation in various applications.

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