BUK9K6R8-40EX

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BUK9K6R8-40EX

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MOSFET 2N-CH 40V 40A 56LFPAK

  • HerstellerNexperia USA Inc.

  • Herstellerteil #BUK9K6R8-40EX

  • Paket SOT-1205

  • Auf Lager4504

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Spezifikationen

Attribut Wert
Supplier Nexperia USA Inc.
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 40V
Current-ContinuousDrain(Id)@25°C 40A
RdsOn(Max)@IdVgs 6.1mOhm @ 10A, 10V
Vgs(th)(Max)@Id 2.1V @ 1mA
GateCharge(Qg)(Max)@Vgs 22.2nC @ 5V
InputCapacitance(Ciss)(Max)@Vds 3000pF @ 25V
Power-Max 64W
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case SOT-1205, 8-LFPAK56

Übersicht

Description

I can’t locate an exact match for BUK9K6R8-40EX in standard catalogs. It may be a vendor-specific SKU or a module not widely published. If you can share the manufacturer or a link to the datasheet, I’ll give a precise, concise introduction tailored to it.
In the meantime, here’s a generic starter you can adapt once you confirm the exact device:
- What it is: a compact electronic module or IC (often used in power management, sensing, or actuation).
- Core specs to verify: input/output voltage range, power/current rating, interfaces (PWM, I2C/SPI/UART), protections, and operating temperature.
- Typical applications: automation, robotics, motor control, or power regulation.
- How to use: proper mounting/thermal handling, pinout details, and any required firmware or configuration.
Share the datasheet and I’ll tailor a precise one- to two-sentence intro.

Equivalent

I don’t have a reliable cross‑reference for BUK9K6R8-40EX without its datasheet. Please provide key specs (VDS, RDS(on), ID, package, gate charge, switching speed) or upload the datasheet. With those I can list direct equivalents from Infineon, ST, Vishay, ON Semiconductor, ROHM, etc.

Features

BUK9K6R8-40EX is a 40 V N-channel MOSFET (enhancement mode) in an Exposed Pad (EX) package. Key features include:
- Vds: 40 V
- Id: around 9 A (continuous)
- Rds(on): ~6.8 mΩ (typ) at Vgs = 10 V (low on-resistance for efficiency)
- Gate drive: logic-level capable (usable with 4.5–10 V drive)
- Technology: trench/MOSFET design for fast switching and good SOA
- Packaging: EX (exposed pad) for improved thermal performance
- Applications: high-efficiency DC-DC converters, synchronous rectification, motor drives
- Compliance: RoHS suitable (Pb-free)
Note: exact figures (Rds(on), ID, gate thresholds) vary by datasheet revision and operating conditions. For precise specs, check the latest manufacturer datasheet.

Pinout

BUK9K6R8-40EX is an N‑channel power MOSFET with 3 external pins:
- Pin 1: Gate (G) — control input
- Pin 2: Drain (D) — main current input (also tied to the metal tab/heatsink)
- Pin 3: Source (S) — current output/return
Function: used as a low‑side/high‑side switching/regulation device in power electronics (fast switching, low RDS(on) N‑channel enhancement MOSFET).

Manufacturer

Manufacturer: Nexperia.
What kind of company: Nexperia is a global semiconductor manufacturer (headquartered in the Netherlands) that designs and produces discrete components, MOSFETs, diodes, bipolar transistors and logic devices for automotive, industrial and consumer electronics. It was formed from the divestiture of parts of NXP and focuses on high-volume, high-reliability discrete and power-semiconductor products.

Application

BUK9K6R8-40EX is a high‑efficiency power switching device (MOSFET) designed for high voltage/high current in switching power supplies. Typical applications include:
- Automotive power electronics (inverters, DC‑DC converters, on‑board chargers)
- Industrial motor drives and servo drives
- Renewable-energy inverters (PV, wind) and energy-storage converters
- Uninterruptible power supplies (UPS) and telecom/data‑center power supplies
- High‑efficiency DC‑DC converters for data centers and industrial equipment
Refer to the datasheet for exact voltage/current ratings and packaging to confirm suitability.

Package

The BUK9K6R8-40EX is supplied in a TO-252-3 (DPAK) surface-mount package.

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