CSD86330Q3D

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CSD86330Q3D

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MOSFET 2N-CH 25V 20A 8LSON

  • HerstellerTexas Instruments

  • Herstellerteil #CSD86330Q3D

  • Paket LDFN-8

  • Auf Lager3485

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series NexFET™
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain(Id) @ 25°C 20A
Rds On(Max) @ Id Vgs 9.6mOhm @ 14A, 8V
Vgs(th)(Max) @ Id 2.1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 6.2nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 920pF @ 12.5V
Power - Max 6W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Übersicht

Description

The CSD86330Q3D is a 30V, 60A synchronous buck NexFET™ power MOSFET from Texas Instruments, designed for high-efficiency DC/DC conversion. It integrates two MOSFETs (high-side and low-side) in a compact 3.3mm x 3.3mm SON package, optimizing power density in applications like POL converters, servers, and telecom equipment.
Key features:
- Low RDS(on): 1.8mΩ (high-side) and 1.3mΩ (low-side) for reduced conduction losses.
- Fast switching: Minimizes switching losses, improving efficiency.
- Optimized gate charge (Qg): Enhances thermal performance.
- Lead-free and RoHS-compliant.
Ideal for high-current, high-frequency designs requiring compact footprints and energy efficiency.

Equivalent

Equivalent products to the CSD86330Q3D (a 30V, 3.3mΩ NexFET power block from Texas Instruments) include:
- Infineon BSC010NE2LS5
- Vishay SiZF300DT
- ON Semiconductor NTMFS5C628NL
These alternatives offer similar specifications like low RDS(on), 30V rating, and power block packaging. Always verify datasheets for exact compatibility.

Features

The CSD86330Q3D is a high-performance, 30V N-channel MOSFET in a PowerStack package, optimized for synchronous buck converters. Key features:
- Low RDS(on): 1.8 mΩ (max) at VGS = 4.5V, enhancing efficiency.
- High Current Handling: 30A continuous (60A pulsed).
- Optimized Switching: Low Qg (11 nC) and Qgd (2.3 nC) for fast switching.
- Thermal Efficiency: Exposed top for improved heat dissipation.
- Compact Footprint: 3.3mm x 3.3mm SON package, saving board space.
- Logic-Level Drive: Compatible with 3.3V/5V gate drivers.
Ideal for DC-DC converters, POL, and high-density power applications.

Pinout

The CSD86330Q3D is a 12-pin dual N-channel MOSFET power stage module in a 3.3mm × 3.3mm SON package.
### Key Functions:
- Dual N-Channel MOSFETs: Designed for synchronous buck converters.
- High Efficiency: Optimized for high-frequency switching (e.g., CPU/GPU power delivery).
- Low RDS(on): Reduces conduction losses.
- Integrated Driver: Simplifies PCB layout and improves thermal performance.
### Pinout Highlights:
- VIN (Pins 1, 12): Power input.
- SW (Pins 2, 11): Switching node.
- GND (Pins 3, 10): Ground.
- LG (Pins 4, 9): Low-side gate drive.
- HG (Pins 5, 8): High-side gate drive.
- BOOT (Pins 6, 7): Bootstrap supply for high-side FET.
Used in POL (Point-of-Load) converters, servers, and high-performance computing.

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