ECH8310-TL-H

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ECH8310-TL-H

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MOSFET P-CH 30V 9A 8ECH

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  • Herstellerteil #ECH8310-TL-H

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Spezifikationen

Attribut Wert
Part Status Active
Base Product Number ECH8310
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 10 V
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-ECH
Package / Case 8-SMD, Flat Leads
Packaging Cut Tape (CT), Tape & Reel (TR)

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