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EPC2019
+StücklisteGANFET N-CH 200V 8.5A DIE
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HerstellerEPZ
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Herstellerteil #EPC2019
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Spezifikationen
| Attribut | Wert |
| Supplier | EPC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | eGaN® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 8.5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V |
| Rds On(Max) @ Id Vgs | 42mOhm @ 7A, 5V |
| Vgs(th)(Max) @ Id | 2.5V @ 1.5mA |
| Gate Charge(Qg)(Max) @ Vgs | 2.9 nC @ 5 V |
| Vgs(Max) | +6V, -4V |
| Input Capacitance(Ciss)(Max) @ Vds | 288 pF @ 100 V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
