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FDA69N25
+StücklistePOWER FIELD-EFFECT TRANSISTOR, 6
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HerstellerOnsemi
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Herstellerteil #FDA69N25
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Datenblatt FDA69N25 DataSheet
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Paket TO-3PN-3
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Spezifikationen
| Attribut | Wert |
| Package / Case | Bulk |
| Series | UniFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain(Id) @ 25°C | 69A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 41mOhm @ 34.5A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 100 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 4640 pF @ 25 V |
| Power Dissipation (Max) | 480W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
Übersicht
Description
Key features of the FDA69N25 include:
1. High Voltage Capability: Typically, it can handle up to 250 volts.
2. Current Handling: The transistor can manage substantial current levels, often around 69 amperes, hence its designation.
3. Efficiency: It offers low on-resistance, optimizing energy usage by minimizing power loss during operation.
4. Thermal Management: Often equipped with capabilities to dissipate heat effectively, ensuring stability under high-load conditions.
Overall, the FDA69N25 is valued for its robustness, efficiency, and reliability in high-power applications.
Equivalent
1. IRF530
2. STP55NF06
3. FQP30N06
4. IRFZ44N
Always verify the specific requirements of your application, such as switching speed and Rds(on), to ensure compatibility with these equivalents. Cross-referencing datasheets is recommended for a precise match.
Features
1. N-Channel MOSFET: Offers high efficiency and fast switching.
2. Voltage and Current Ratings: Typically features a high drain-source voltage (V_DS) and drain current (I_D) rating, making it suitable for high-power applications.
3. Low On-Resistance: The low R_DS(on) ensures minimal power loss and heat generation during operation.
4. Fast Switching Speed: Ideal for applications requiring rapid switching.
5. Enhancement Mode: The MOSFET is turned on by applying a positive voltage to the gate.
6. Thermal Management: Often includes features for effective heat dissipation, allowing it to handle high power levels.
7. Robust Design: Designed to withstand significant electrical and thermal stress.
8. Applications: Used in power supplies, motor controllers, and DC-DC converters.
These characteristics make the FDA69N25 suitable for demanding applications that require robust performance and reliability.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off. It effectively controls the flow of current between the drain and source.
2. Drain (D): This is the terminal through which the main current flows when the MOSFET is turned on. It is connected to the load in a circuit.
3. Source (S): This is the terminal through which the current exits the MOSFET. It is typically connected to the ground or a reference point in the circuit.
These pins allow the FDA69N25 to function as a switch or amplifier in various electronic circuits. Always refer to the specific datasheet for detailed specifications and characteristics.
Manufacturer
Application
1. Power Supply Units: Used in switch-mode power supplies (SMPS) for improved energy efficiency.
2. Motor Control: Ideal for controlling brushed and brushless DC motors in industrial and consumer applications.
3. Automotive Systems: Utilized in electric vehicles and automotive electronics for efficient power management.
4. Inverters: Employed in solar inverters and uninterruptible power supplies (UPS) for energy conversion.
5. Lighting: Used in LED drivers and other lighting applications for efficient power regulation.
These applications benefit from the device's low on-resistance and fast switching speed.