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FDB86363-F085
+StücklisteMOSFET N-CH 80V 110A D2PAK
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HerstellerOnsemi
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Herstellerteil #FDB86363-F085
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Datenblatt FDB86363-F085 DataSheet
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Auf Lager28005
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain(Id) @ 25°C | 110A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 2.4mOhm @ 80A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 150 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 10000 pF @ 40 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
Übersicht
Description
In general, such codes are often used for cataloging, organizing, or tracking items efficiently. If FDB86363-F085 is a product, it may include specifications or details relevant to its use, such as dimensions, materials, or functionality. If it's a document, it could represent a version number or a specific file in a larger collection.
To understand FDB86363-F085 better, one would typically need access to the system or database where this code is used, or additional context about the organization or industry it belongs to.
Equivalent
Features
1. Voltage and Current Ratings: High voltage and current handling capabilities, often used for switching and power amplification.
2. Low On-Resistance: Offers efficient conductivity when in the "on" state, minimizing power loss.
3. Fast Switching Speed: Provides quick transition between on and off states, critical for high-frequency applications.
4. Thermal Management: Designed to handle heat effectively, often featuring a robust package for better thermal performance.
5. Gate Charge: Optimized for lower gate charge, improving efficiency by reducing the power required to switch the device.
6. Enhanced Ruggedness: Built to withstand high levels of stress, including voltage spikes and continuous operation under load.
These features make the FDB86363-F085 suitable for applications in consumer electronics, automotive systems, and industrial power solutions. Always refer to the specific datasheet for detailed specifications and ratings.
Pinout
1. Gate (G): This pin is used to control the operation of the MOSFET. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is turned on.
3. Source (S): The source is the terminal through which the main current enters the MOSFET.
In addition to the three pins, the tab or thermal pad on the package is often connected internally to the drain and is used for heat dissipation. This MOSFET is used in various applications, including automotive, due to its low on-resistance and high efficiency.