FDB86363-F085

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FDB86363-F085

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MOSFET N-CH 80V 110A D2PAK

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Spezifikationen

Attribut Wert
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain(Id) @ 25°C 110A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 2.4mOhm @ 80A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 150 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 10000 pF @ 40 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)

Übersicht

Description

FDB86363-F085 appears to be a code or label that might refer to a specific product, document, or item in a particular database or inventory system. Without additional context, such as the industry or field it pertains to, it is challenging to provide a detailed introduction.
In general, such codes are often used for cataloging, organizing, or tracking items efficiently. If FDB86363-F085 is a product, it may include specifications or details relevant to its use, such as dimensions, materials, or functionality. If it's a document, it could represent a version number or a specific file in a larger collection.
To understand FDB86363-F085 better, one would typically need access to the system or database where this code is used, or additional context about the organization or industry it belongs to.

Equivalent

The FDB86363-F085 is an N-channel MOSFET typically used for automotive applications. Equivalent products can include similar specifications and characteristics, such as the Infineon BSC026N08NS5, ON Semiconductor NTMFS5C604NL, and Vishay SIHP054N08E. When choosing an equivalent, ensure the voltage, current ratings, on-resistance, and package type match your application requirements. Always verify with the manufacturers' datasheets for precise compatibility.

Features

The FDB86363-F085 is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), typically used in power management applications. While specific features may vary slightly depending on the manufacturer, general characteristics of this type of MOSFET include:
1. Voltage and Current Ratings: High voltage and current handling capabilities, often used for switching and power amplification.
2. Low On-Resistance: Offers efficient conductivity when in the "on" state, minimizing power loss.
3. Fast Switching Speed: Provides quick transition between on and off states, critical for high-frequency applications.
4. Thermal Management: Designed to handle heat effectively, often featuring a robust package for better thermal performance.
5. Gate Charge: Optimized for lower gate charge, improving efficiency by reducing the power required to switch the device.
6. Enhanced Ruggedness: Built to withstand high levels of stress, including voltage spikes and continuous operation under load.
These features make the FDB86363-F085 suitable for applications in consumer electronics, automotive systems, and industrial power solutions. Always refer to the specific datasheet for detailed specifications and ratings.

Pinout

The FDB86363-F085 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from ON Semiconductor. It typically comes in a TO-252 package, which is commonly known as a DPAK. This package generally has a 3-pin configuration. The pin functions are as follows:
1. Gate (G): This pin is used to control the operation of the MOSFET. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is turned on.
3. Source (S): The source is the terminal through which the main current enters the MOSFET.
In addition to the three pins, the tab or thermal pad on the package is often connected internally to the drain and is used for heat dissipation. This MOSFET is used in various applications, including automotive, due to its low on-resistance and high efficiency.

Manufacturer

The FDB86363-F085 is manufactured by ON Semiconductor, a company known for producing a wide range of semiconductor components. ON Semiconductor is a leading supplier in the electronics industry, specializing in power and signal management, logic, discrete, and custom devices. Their products are used in various applications, including automotive, industrial, consumer electronics, computing, and communications.

Application

The FDB86363-F085 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power management applications. Its primary application areas include automotive systems, particularly in electric and hybrid vehicles for controlling electric motors and battery management. It is also used in power supplies, DC-DC converters, and various industrial applications where efficient power switching is required. Its features, such as low on-resistance and high current handling capabilities, make it suitable for environments needing efficient thermal and power management.

Package

The FDB86363-F085 is a PowerTrench MOSFET, typically found in a TO-252 package, also known as DPAK. This package type is used for surface mounting in electronic circuits, providing efficient thermal performance and space-saving benefits.

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