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FDC6321C
+StücklisteDUAL N & P CHANNEL DIGITAL FET 2
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HerstellerOnsemi
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Herstellerteil #FDC6321C
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Datenblatt FDC6321C DataSheet
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Auf Lager6354
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Part Status | Active |
Übersicht
Description
Key features of the FDC6321C include a low threshold voltage, which allows it to operate efficiently with low gate drive voltages, and a high maximum drain current, which supports significant power throughput. Its compact package and thermal performance enhance its suitability for space-constrained applications, such as portable electronics.
The FDC6321C also offers ESD (Electrostatic Discharge) protection, enhancing its robustness during handling and operation. As with any electronic component, proper handling and circuit design are essential to ensure optimal performance and reliability. Always refer to the manufacturer's datasheet for specific electrical characteristics and application guidelines to ensure compatibility and effectiveness in your projects.
Equivalent
Features
1. Dual N-Channel Configuration: This device combines two N-channel MOSFETs in a single package, enhancing space efficiency and simplifying circuit design.
2. Low On-Resistance: It offers very low on-resistance, which reduces power loss and improves efficiency in switching applications.
3. High-Speed Switching: The FDC6321C supports high-speed switching, making it suitable for applications requiring rapid switching cycles.
4. Compact Package: Typically available in a small Surface-Mount Device (SMD) package, it is ideal for compact and portable electronic devices.
5. Thermal Performance: Designed to manage heat effectively, it can handle significant power loads within its operational limits.
6. Applications: Commonly used in DC-DC converters, power management in portable devices, load switching, and general-purpose switching applications.
These features make the FDC6321C a versatile component for engineers designing energy-efficient and compact electronic circuits.
Pinout
1. Pin 1 (P-Channel Gate): This pin controls the P-Channel MOSFET. Applying a voltage here turns the P-Channel MOSFET on or off.
2. Pin 2 (P-Channel Source): This pin is connected to the source of the P-Channel MOSFET, typically tied to the higher voltage supply.
3. Pin 3 (P-Channel Drain / N-Channel Drain): This is a common pin for both the drain of the P-Channel and the drain of the N-Channel MOSFET.
4. Pin 4 (N-Channel Source): This pin is connected to the source of the N-Channel MOSFET, usually tied to ground.
5. Pin 5 (N-Channel Gate): This pin controls the N-Channel MOSFET. Manipulating the voltage here turns the N-Channel MOSFET on or off.
6. Pin 6 (N-Channel Drain / P-Channel Drain): This is shared with pin 3 as the drain connection for both N-Channel and P-Channel MOSFETs.
The FDC6321C is used in switching applications where high efficiency and compact packaging are necessary.