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FDC6327C
+StücklisteMOSFET N/P-CH 20V SSOT-6
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HerstellerOnsemi
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Herstellerteil #FDC6327C
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Paket SOT-6
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Auf Lager1833
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 2.7A, 1.9A |
| Rds On(Max) @ Id Vgs | 80mOhm @ 2.7A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 4.5nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 325pF @ 10V |
| Power - Max | 700mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
Key specifications of the FDC6327C include a drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of up to 6.3A. It also has a low gate charge, allowing for rapid switching and improved performance in high-frequency circuits. The device is housed in a small, surface-mount package, which facilitates compact PCB designs.
The FDC6327C is often favored for its reliability and performance in demanding electronic environments. Designers appreciate its balance of power handling capabilities and efficient characteristics, making it a popular choice in various consumer electronics, automotive, and industrial applications.
Equivalent
Features
1. Dual N-Channel MOSFETs: It integrates two N-channel MOSFETs in a single package, which can be used for various switching applications.
2. Low On-Resistance: Offers low R_DS(on) values, enhancing efficiency by minimizing power loss during operation.
3. Compact Package: Comes in a small, space-saving package suitable for compact circuit designs.
4. High-Speed Switching: Designed to provide fast switching speeds, which is vital for high-frequency applications.
5. Low Gate Charge: Features a low gate charge, reducing the power required to drive the MOSFET and improving overall efficiency.
6. Rugged Construction: Built to handle harsh environmental conditions and ensure reliability in various applications.
7. Thermal Performance: Optimized for good thermal performance to manage heat dissipation efficiently.
These features make the FDC6327C suitable for applications in power management, load switching, and other areas where efficient and compact switching solutions are required.
Pinout
1. Pin 1 (Source 1): Source terminal for MOSFET 1.
2. Pin 2 (Gate 1): Gate terminal for MOSFET 1, used to control the channel.
3. Pin 3 (Drain 2): Drain terminal for MOSFET 2.
4. Pin 4 (Source 2): Source terminal for MOSFET 2.
5. Pin 5 (Gate 2): Gate terminal for MOSFET 2, used to control the channel.
6. Pin 6 (Drain 1): Drain terminal for MOSFET 1.
These MOSFETs are typically used in low-voltage DC-DC conversion applications, load switching, and other general-purpose switching tasks in electronic devices. The compact SOT-23-6 package makes it suitable for space-constrained applications.