FDG6320C

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FDG6320C

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MOSFET N/P-CH 25V 220/140MA SC88

  • HerstellerOnsemi

  • Herstellerteil #FDG6320C

  • Paket TSSOP-6

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Part Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain(Id) @ 25°C 220mA, 140mA
Rds On(Max) @ Id Vgs 4Ohm @ 220mA, 4.5V
Vgs(th)(Max) @ Id 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.4nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 9.5pF @ 10V
Power - Max 300mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Übersicht

Equivalent

The FDG6320C is a dual N-channel MOSFET. Equivalent or similar products include:
- FDG6320N (same series, different packaging)
- SI2302DS (Vishay/Siliconix)
- DMN2004DWK (Diodes Inc.)
- NTJD5121NT1G (ON Semiconductor)
- BSS138DW (NXP/Infineon, for lower current)
Check datasheets for exact specs like Vgs, Id, and Rds(on) before substitution.

Features

The FDG6320C is an N-channel MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 5.7A (continuous)
- Low On-Resistance (RDS(on)): 50mΩ @ 10V, 60mΩ @ 4.5V
- Gate Threshold Voltage (VGS(th)): 1V (typical)
- Fast Switching Speed: Optimized for high-efficiency applications
- Power Dissipation: 2W (max)
- Package: SOT-23 (Compact & space-saving)
- Applications: Power management, load switching, DC-DC converters, and battery protection.
It’s designed for low-voltage, high-efficiency circuits, making it ideal for portable electronics and power systems.

Pinout

The FDG6320C is a dual N-channel MOSFET in a SOT-363 (SC-70-6) package with 6 pins.
### Pin Functions:
1. Gate 1 (G1) – Controls the first MOSFET.
2. Source 1 (S1) – Source terminal of the first MOSFET.
3. Drain 1 (D1) – Drain terminal of the first MOSFET.
4. Drain 2 (D2) – Drain terminal of the second MOSFET.
5. Source 2 (S2) – Source terminal of the second MOSFET.
6. Gate 2 (G2) – Controls the second MOSFET.
### Key Features:
- Low threshold voltage (suitable for 1.8V logic).
- Low on-resistance (RDS(on)) for efficient switching.
- Commonly used in power management, load switching, and battery protection circuits.
The FDG6320C is compact and ideal for space-constrained applications.

Application

The FDG6320C is an N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulators.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – Small motor drivers, robotics.
4. LED Drivers – Backlight control, lighting systems.
5. Portable Devices – Smartphones, tablets (low-power applications).
Its low on-resistance (RDS(on)) and compact package (SOT-23-6) make it ideal for space-constrained, high-efficiency designs.

Package

The FDG6320C is a dual N-channel MOSFET in a compact TSOT-23-6 package. It features low on-resistance and is designed for power management applications. The package is surface-mount, small, and suitable for space-constrained designs.

Produkte, die mit FDG6320C zusammenhängen

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